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IRG4BC40UPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRG4BC40UPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR E C G n-channel Features UltraFast: optimized for high operating frequencies 8-40 KHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs Benefits Parameter Min. Typ. Max. Units RθJC Junction-to-Case ------ ------ 0.77 RθCS Case-to-Sink, flat, greased surface ------ 0.50 ------ °C/W RθJA Junction-to-Ambient, typical socket mount ------ ------ 80 Wt Weight ------ 2 (0.07) ------ g (oz) Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 40 IC @ TC = 100°C Continuous Collector Current 20 A ICM Pulsed Collector Current 160 ILM Clamped Inductive Load Current 160 VGE Gate-to-Emitter Voltage ±20 V EARV Reverse Voltage Avalanche Energy 15 mJ PD @ TC = 25°C Maximum Power Dissipation 160 PD @ TC = 100°C Maximum Power Dissipation 65 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) Thermal Resistance VCES=600V VCE(on) typ. = 1.72V @VGE = 15V, IC = 20A 02/18/10 W www.irf.com 1 TO-220AB PD - 95428A |
Similar Part No. - IRG4BC40UPBF_15 |
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Similar Description - IRG4BC40UPBF_15 |
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