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IRG4BC30FPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG4BC30FPBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page IRG4BC30FPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 51 77 IC = 17A Qge Gate - Emitter Charge (turn-on) 7.9 12 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) 19 28 VGE = 15V td(on) Turn-On Delay Time 21 tr Rise Time 15 TJ = 25°C td(off) Turn-Off Delay Time 200 300 IC = 17A, VCC = 480V tf Fall Time 180 270 VGE = 15V, RG = 23Ω Eon Turn-On Switching Loss 0.23 Energy losses include "tail" Eoff Turn-Off Switching Loss 1.18 mJ See Fig. 10, 11, 13, 14 Ets Total Switching Loss 1.41 2.0 td(on) Turn-On Delay Time 20 TJ = 150°C, tr Rise Time 16 IC = 17A, VCC = 480V td(off) Turn-Off Delay Time 290 VGE = 15V, RG = 23Ω tf Fall Time 350 Energy losses include "tail" Ets Total Switching Loss 2.5 mJ See Fig. 13, 14 LE Internal Emitter Inductance 7.5 nH Measured 5mm from package Cies Input Capacitance 1100 VGE = 0V Coes Output Capacitance 74 pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance 14 = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage 0.69 V/°C VGE = 0V, IC = 1.0mA 1.59 1.8 IC = 17A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage 1.99 IC = 31A See Fig.2, 5 1.7 IC = 17A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage -11 mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance
6.1 10 S VCE = 100V, IC = 17A 250 VGE = 0V, VCE = 600V 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot. Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω, (See fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. |
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Similar Description - IRG4BC30FPBF_15 |
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