Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

IRG4BC30FPBF Datasheet(PDF) 2 Page - International Rectifier

Part # IRG4BC30FPBF
Description  INSULATED GATE BIPOLAR TRANSISTOR
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4BC30FPBF Datasheet(HTML) 2 Page - International Rectifier

  IRG4BC30FPBF_15 Datasheet HTML 1Page - International Rectifier IRG4BC30FPBF_15 Datasheet HTML 2Page - International Rectifier IRG4BC30FPBF_15 Datasheet HTML 3Page - International Rectifier IRG4BC30FPBF_15 Datasheet HTML 4Page - International Rectifier IRG4BC30FPBF_15 Datasheet HTML 5Page - International Rectifier IRG4BC30FPBF_15 Datasheet HTML 6Page - International Rectifier IRG4BC30FPBF_15 Datasheet HTML 7Page - International Rectifier IRG4BC30FPBF_15 Datasheet HTML 8Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
IRG4BC30FPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
—
51
77
IC = 17A
Qge
Gate - Emitter Charge (turn-on)
—
7.9
12
nC
VCC = 400V
See Fig. 8
Qgc
Gate - Collector Charge (turn-on)
—
19
28
VGE = 15V
td(on)
Turn-On Delay Time
—
21
—
tr
Rise Time
—
15
—
TJ = 25°C
td(off)
Turn-Off Delay Time
—
200 300
IC = 17A, VCC = 480V
tf
Fall Time
—
180 270
VGE = 15V, RG = 23Ω
Eon
Turn-On Switching Loss
—
0.23—
Energy losses include "tail"
Eoff
Turn-Off Switching Loss
—
1.18
—
mJ
See Fig. 10, 11, 13, 14
Ets
Total Switching Loss
—
1.41 2.0
td(on)
Turn-On Delay Time
—
20
—
TJ = 150°C,
tr
Rise Time
—
16
—
IC = 17A, VCC = 480V
td(off)
Turn-Off Delay Time
—
290
—
VGE = 15V, RG = 23Ω
tf
Fall Time
—
350
—
Energy losses include "tail"
Ets
Total Switching Loss
—
2.5
—
mJ
See Fig. 13, 14
LE
Internal Emitter Inductance
—
7.5
—
nH
Measured 5mm from package
Cies
Input Capacitance
— 1100 —
VGE = 0V
Coes
Output Capacitance
—
74
—
pF
VCC = 30V
See Fig. 7
Cres
Reverse Transfer Capacitance
—
14
—
ƒ = 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
V
VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage „
18
—
—
V
VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
—
0.69
—
V/°C VGE = 0V, IC = 1.0mA
—
1.59 1.8
IC = 17A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
—
1.99
—
IC = 31A
See Fig.2, 5
—
1.7
—
IC = 17A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
—
-11
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance …
6.1
10
—
S
VCE = 100V, IC = 17A
—
—
250
VGE = 0V, VCE = 600V
—
—
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
—
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
—
— ±100
nA
VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ICES
Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs, single shot.
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.


Similar Part No. - IRG4BC30FPBF_15

ManufacturerPart #DatasheetDescription
logo
International Rectifier
IRG4BC30FPBF IRF-IRG4BC30FPBF Datasheet
218Kb / 8P
   Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR
More results

Similar Description - IRG4BC30FPBF_15

ManufacturerPart #DatasheetDescription
logo
International Rectifier
IRG4BH20K-L IRF-IRG4BH20K-L Datasheet
167Kb / 8P
   INSULATED GATE BIPOLAR TRANSISTOR
IRGP20B120U-E IRF-IRGP20B120U-E Datasheet
106Kb / 10P
   INSULATED GATE BIPOLAR TRANSISTOR
logo
Motorola, Inc
MGP14N60E MOTOROLA-MGP14N60E Datasheet
125Kb / 6P
   Insulated Gate Bipolar Transistor
MGW30N60 MOTOROLA-MGW30N60 Datasheet
214Kb / 6P
   Insulated Gate Bipolar Transistor
logo
ON Semiconductor
MGP20N60U ONSEMI-MGP20N60U Datasheet
120Kb / 5P
   Insulated Gate Bipolar Transistor
1998 REV 1
MGS13002D ONSEMI-MGS13002D Datasheet
138Kb / 6P
   Insulated Gate Bipolar Transistor
1998 REV 2
MGW21N60ED ONSEMI-MGW21N60ED Datasheet
152Kb / 6P
   Insulated Gate Bipolar Transistor
MMG05N60D ONSEMI-MMG05N60D Datasheet
138Kb / 6P
   Insulated Gate Bipolar Transistor
REV 2
logo
International Rectifier
IRG4PSC71UPBF IRF-IRG4PSC71UPBF_15 Datasheet
294Kb / 8P
   INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC30KPBF IRF-IRG4PC30KPBF_15 Datasheet
261Kb / 9P
   INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC30SPBF IRF-IRG4PC30SPBF_15 Datasheet
250Kb / 9P
   INSULATED GATE BIPOLAR TRANSISTOR
More results


Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com