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NCP170AMX190TCG Datasheet(PDF) 7 Page - ON Semiconductor

Part # NCP170AMX190TCG
Description  Ultra?륧ow IQ 150 mA CMOS LDO Regulator
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP170AMX190TCG Datasheet(HTML) 7 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 2.8 V
(−40
°C ≤ TJ ≤ 85°C; VIN = 3.8 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 19)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
VIN
Operating Input Voltage
2.2
5.5
V
VOUT
Output Voltage
TA = +25°C
2.772
2.8
2.828
V
−40
°C ≤ TJ ≤ 85°C
2.744
2.8
2.856
LineReg
Line Regulation
3.8 V < VIN ≤ 5.5 V, IOUT = 1 mA
0.05
0.20
%/V
LoadReg
Load Regulation
0 mA < IOUT ≤ 150 mA, VIN = 3.8 V
−20
1
20
mV
VDO
Dropout Voltage
IOUT = 150 mA (Note 20)
210
300
mV
IOUT
Output Current
(Note 21)
150
mA
ISC
Short Circuit Current Limit
VOUT = 0 V
195
mA
IQ
Quiescent Current
IOUT = 0 mA
0.5
0.9
mA
ISTB
Standby Current
VEN = 0 V, TJ = 25°C
0.1
0.5
mA
VENH
EN Pin Threshold Voltage
EN Input Voltage “H”
1.2
V
VENL
EN Pin Threshold Voltage
EN Input Voltage “L”
0.4
V
IEN
EN Pull Down Current
VEN ≤ VIN ≤ 5.5 V (Note 22)
10
nA
PSRR
Power Supply Rejection Ratio
f = 1 kHz, VIN = 3.8 V + 200 mVpp Modulation
IOUT = 150 mA
40
dB
VNOISE
Output Noise Voltage
VIN = 5.5 V, IOUT = 1 mA
f = 100 Hz to 1 MHz, COUT = 1 mF
125
mVrms
RLOW
Active Output Discharge
Resistance (A option only)
VIN = 5.5 V, VEN = 0 V (Note 22)
100
W
TSD
Thermal Shutdown Temperature
Temperature Increasing from TJ = +25°C
(Note 22)
175
°C
TSDH
Thermal Shutdown Hysteresis
Temperature Falling from TSD (Note 22)
25
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
19. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at
TJ =TA =25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
20. Characterized when VOUT falls 84 mV below the regulated voltage and only for devices with VOUT = 2.8 V.
21. Respect SOA.
22. Guaranteed by design and characterization.


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