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NCP114AMX100TCG Datasheet(PDF) 3 Page - ON Semiconductor

Part # NCP114AMX100TCG
Description  300 mA CMOS Low Dropout Regulator
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP114AMX100TCG Datasheet(HTML) 3 Page - ON Semiconductor

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NCP121
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS
−40
°C ≤ TJ ≤ 85°C; VBIAS = 2.7 V or (VOUT + 1.6 V), whichever is greater, VIN = VOUT(NOM) + 0.3 V, IOUT = 1 mA, VEN = 1 V, unless
otherwise noted. CIN = 1 mF, CBIAS = 0.1 mF, COUT = 1 mF (effective capacitance) (Note 3). Typical values are at TJ = +25°C. Min/Max
values are for −40
°C ≤ TJ ≤ 85°C unless otherwise noted. (Note 4)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Operating Input
Voltage Range
VIN
VOUT+VDO
5.5
V
Operating Bias Voltage
Range
VBIAS
(VOUT+1.35)
≥2.4
5.5
V
Undervoltage Lock−out VBIAS Rising
Hysteresis
UVLO
1.6
0.2
V
Output Voltage
Accuracy
−40
°C ≤ TJ ≤ 85°C, VOUT(NOM) + 0.3 V ≤ VIN
5.0 V, 2.7 V or (VOUT(NOM) + 1.6 V), whichever is
greater < VBIAS < 5.5 V, 1 mA < IOUT < 150 mA
VOUT
−1.0
+1.0
%
Output Voltage
Accuracy
VOUT
±0.2
%
VIN Line Regulation
VOUT(NOM) + 0.3 V ≤ VIN ≤ 5.0 V
LineReg
0.01
%/V
VBIAS Line Regulation
2.7 V or (VOUT(NOM) + 1.6 V), whichever is
greater < VBIAS < 5.5 V
LineReg
0.01
%/V
Load Regulation
IOUT = 1 mA to 150 mA
LoadReg
1.5
mV
VIN Dropout Voltage
IOUT = 150 mA (Note 5)
VDO
37
75
mV
VBIAS Dropout Voltage
IOUT = 150 mA, VIN = VBIAS (Note 5)
VDO
1.1
1.4
V
Output Current Limit
VOUT = 90% VOUT(NOM)
ICL
200
330
600
mA
Bias Pin Operating
Current
VBIAS = 2.7 V
IBIAS
80
110
mA
Bias Pin Disable
Current
VEN ≤ 0.4 V
IBIAS(DIS)
0.5
1
mA
Vinput Pin Disable
Current
VEN ≤ 0.4 V
IVIN(DIS)
0.5
1
mA
EN Pin Threshold
Voltage
EN Input Voltage “H”
VEN(H)
0.9
V
EN Input Voltage “L”
VEN(L)
0.4
EN Pull Down Current
VEN = 5.5 V
IEN
0.3
1.0
mA
Turn−On Time
COUT = 1 mF, From assertion of VEN to
VOUT = 98% VOUT(NOM), VOUT(NOM) = 1.05 V
tON
150
ms
Power Supply
Rejection Ratio
VIN to VOUT, f = 1 kHz, IOUT = 150 mA,
VIN
≥ VOUT +0.5 V
PSRR(VIN)
70
dB
VBIAS to VOUT, f = 1 kHz, IOUT = 150 mA,
VIN
≥ VOUT +0.5 V
PSRR(VBIAS)
80
dB
Output Noise Voltage
VIN = VOUT +0.5 V, VOUT(NOM) = 1.05 V,
f = 10 Hz to 100 kHz
VN
40
mVRMS
Thermal Shutdown
Threshold
Temperature increasing
160
°C
Temperature decreasing
140
Output Discharge
Pull−Down
VEN ≤ 0.4 V, VOUT = 0.5 V,
NCP121A options only
RDISCH
150
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Effective capacitance, including the effect of DC bias, tolerance and temperature. See the Application Information section for more
information.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C.
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.
5. Dropout voltage is characterized when VOUT falls 3% below VOUT(NOM).


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