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LPM9014 Datasheet(PDF) 1 Page - Lowpower Semiconductor inc |
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LPM9014 Datasheet(HTML) 1 Page - Lowpower Semiconductor inc |
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1 / 3 page  LPM9014 LPM9014 Sep..-2003 1-3 LPM9014 N-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = 20V ID = 4.2A RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 63mΩ (VGS = 2.5V) RDS(ON) < 87mΩ (VGS = 1.8V) General Description The LPM9014 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Standard Product LPM9014 is Pb-free (meets ROHS & Sony 259 specifications). LPM9014L is a Green Product ordering option. LPM9014 and LPM9014L are electrically identical. Pin Configurations |
Similar Part No. - LPM9014 |
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Similar Description - LPM9014 |
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