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PBSS5420D Datasheet(PDF) 6 Page - NXP Semiconductors

Part # PBSS5420D
Description  20 V, 4 A PNP low VCEsat (BISS) transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBSS5420D Datasheet(HTML) 6 Page - NXP Semiconductors

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PBSS5420D_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 29 September 2008
6 of 14
NXP Semiconductors
PBSS5420D
20 V, 4 A PNP low VCEsat (BISS) transistor
7.
Characteristics
[1]
Pulse test: tp ≤ 300 µs; δ≤ 0.02.
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = −20 V; IE = 0 A
-
-
−0.1
µA
VCB = −20 V; IE = 0 A;
Tj = 150 °C
--
−50
µA
ICES
collector-emitter
cut-off current
VCE = −20 V; VBE = 0 V
-
-
−0.1
µA
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−0.1
µA
hFE
DC current gain
VCE = −2 V; IC = −0.5 A
250
400
-
VCE = −2 V; IC = −1 A
[1] 250
400
-
VCE = −2 V; IC = −2 A
[1] 200
330
-
VCE = −2 V; IC = −4 A
[1] 120
200
-
VCE = −2 V; IC = −6 A
[1] 80
130
-
VCEsat
collector-emitter
saturation voltage
IC = −0.5 A; IB = −50 mA
-
−35
−50
mV
IC = −1 A; IB = −50 mA
-
−65
−90
mV
IC = −2 A; IB = −200 mA
-
−110
−150
mV
IC = −4 A; IB = −400 mA
[1] -
−200
−280
mV
IC = −6 A; IB = −600 mA
[1] -
−300
−420
mV
RCEsat
collector-emitter
saturation resistance
IC = −4 A; IB = −400 mA
[1] -
5070m
VBEsat
base-emitter
saturation voltage
IC = −0.5 A; IB = −50 mA
-
−0.8
−0.85
V
IC = −1 A; IB = −50 mA
-
−0.84
−0.9
V
IC = −1 A; IB = −100 mA
[1] -
−0.84
−1V
IC = −4 A; IB = −400 mA
[1] -
−1.0
−1.1
V
VBEon
base-emitter turn-on
voltage
VCE = −2 V; IC = −2 A
-
−0.8
−1V
td
delay time
VCC = −12.5 V; IC = −3 A;
IBon = −0.15 A;
IBoff = 0.15 A
-10
-
ns
tr
rise time
-
35
-
ns
ton
turn-on time
-
45
-
ns
ts
storage time
-
200
-
ns
tf
fall time
-
80
-
ns
toff
turn-off time
-
280
-
ns
fT
transition frequency
VCE = −10 V; IC = −0.1 A;
f = 100 MHz
-
80
-
MHz
Cc
collector capacitance VCB = −10 V; IE =ie =0A;
f=1MHz
-80
-
pF


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