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IRFR4105PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFR4105PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 11 page  IRFR4105PbF IRFU4105PbF HEXFET® Power MOSFET Description 1/7/05 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 27 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 19 A IDM Pulsed Drain Current 100 PD @TC = 25°C Power Dissipation 68 W Linear Derating Factor 0.45 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 65 mJ IAR Avalanche Current 16 A EAR Repetitive Avalanche Energy 6.8 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 2.2 RθJA Junction-to-Ambient (PCB mount) ** ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 Thermal Resistance D-PAK TO-252AA I-PAK TO-251AA l Ultra Low On-Resistance l Surface Mount (IRFR4105) l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through- hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. PD - 95550A www.irf.com 1 l Lead-Free S D G VDSS = 55V RDS(on) = 0.045Ω ID = 27A
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Similar Part No. - IRFR4105PBF_15 |
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Similar Description - IRFR4105PBF_15 |
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