NSBC113EF3 datasheet(5/12 Pages) ONSEMI

Part #	NSBC113EF3

Description	Digital Transistors (BRT) R1 = 1 k, R2 = 1 k

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Manufacturer	ONSEMI [ON Semiconductor]

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MUN2230, MMUN2230L, MUN5230, DTC113EE, DTC113EM3, NSBC113EF3

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5

Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current

(VCB = 50 V, IE = 0)

ICBO

−

100

nAdc

Collector−Emitter Cutoff Current

(VCE = 50 V, IB = 0)

ICEO

−

500

nAdc

Emitter−Base Cutoff Current

(VEB = 6.0 V, IC = 0)

IEBO

−

4.3

mAdc

Collector−Base Breakdown Voltage

(IC = 10 mA, IE = 0)

V(BR)CBO

50

−

Vdc

Collector−Emitter Breakdown Voltage (Note 5)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

50

−

Vdc

ON CHARACTERISTICS

DC Current Gain (Note 5)

(IC = 5.0 mA, VCE = 10 V)

hFE

3.0

5.0

−

Collector−Emitter Saturation Voltage (Note 5)

(IC = 10 mA, IB = 5.0 mA)

VCE(sat)

−

0.25

Vdc

Input Voltage (off)

(VCE = 5.0 V, IC = 100 mA)

Vi(off)

−

1.2

0.5

Vdc

Input Voltage (on)

(VCE = 0.3 V, IC = 20 mA)

Vi(on)

2

1.6

−

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

VOL

−

0.2

Vdc

Output Voltage (off)

(VCC = 5.0 V, VB = 0.05 V, RL = 1.0 kW)

VOH

4.9

−

Vdc

Input Resistor

R1

0.7

1.0

1.3

k

W

Resistor Ratio

R1/R2

0.8

1.0

1.2

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle

≤ 2%.

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