PBSS5240X_15 datasheet(6/12 Pages) PHILIPS

Part #	PBSS5240X

Description	40 V, 2 A PNP low VCEsat (BISS) transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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NXP Semiconductors

PBSS5240X

40 V, 2 A PNP low VCEsat (BISS) transistor

PBSS5240X

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Product data sheet

19 October 2012

6 / 12

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VBEsat

base-emitter saturation

voltage

IC = -1 A; IB = -100 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

-1.2

V

VBEon

base-emitter turn-on

voltage

VCE = -5 V; IC = -1 A; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

-1.1

V

fT

transition frequency

VCE = -10 V; IC = -50 mA; f = 100 MHz;

Tamb = 25 °C

150

-

MHz

Cc

collector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

-

12

pF

006aaa794

400

200

600

800

hFE

0

IC (mA)

- 1

- 104

- 103

- 10

- 102

(1)

(2)

(3)

VCE = -5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 5. DC current gain as a function of collector

current; typical values

VCE (V)

0

- 5

- 4

- 2

- 3

- 1

006aaa799

- 0.8

- 1.6

- 2.4

IC

(A)

0

IB (mA) = - 24

- 21.6

- 19.2

- 16.8

- 14.4

- 9.6

- 7.2

- 4.8

- 2.4

- 12

Tamb = 25 °C

Fig. 6. Collector current as a function of collector-

emitter voltage; typical values

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