PBSS4350SPN_15 datasheet(9/19 Pages) PHILIPS

Part #	PBSS4350SPN

Description	50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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9 / 19 page

PBSS4350SPN_1

Product data sheet

Rev. 01 — 5 April 2007

9 of 19

NXP Semiconductors

PBSS4350SPN

50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

VCE =2V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 5.

TR1 (NPN): DC current gain as a function of

collector current; typical values

Fig 6.

TR1 (NPN): Collector current as a function of

collector-emitter voltage; typical values

VCE =2V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

IC/IB =20

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 7.

TR1 (NPN): Base-emitter voltage as a function

of collector current; typical values

Fig 8.

TR1 (NPN): Base-emitter saturation voltage as a

function of collector current; typical values

006aaa968

400

600

200

800

1000

hFE

0

IC (mA)

10−1

104

103

1102

10

(1)

(2)

(3)

VCE (V)

0

2.0

1.6

0.8

1.2

0.4

006aaa969

2

3

1

4

5

IC

(A)

0

IB (mA) = 100

90

10

80

70

60

50

40

30

20

006aaa970

0.4

0.8

1.2

VBE

(V)

0

IC (mA)

10−1

104

103

1102

10

(1)

(2)

(3)

006aaa971

0.6

1.0

1.4

VBEsat

(V)

0.2

IC (mA)

10−1

104

103

1102

10

(1)

(2)

(3)

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