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PBSS4330X Datasheet(PDF) 3 Page - NXP Semiconductors |
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PBSS4330X Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page 2004 Dec 06 3 NXP Semiconductors Product data sheet 30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) note 4 − 3 A ICM peak collector current limited by Tj(max) − 5 A IB base current (DC) − 0.5 A Ptot total power dissipation Tamb ≤ 25 °C note 1 − 550 mW note 2 − 1 W note 3 − 1.4 W note 4 − 1.6 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C |
Similar Part No. - PBSS4330X_15 |
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Similar Description - PBSS4330X_15 |
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