© Semiconductor Components Industries, LLC, 2015

April, 2015 − Rev. 12

1

Publication Order Number:

BC846AWT1/D

BC846, BC847, BC848

General Purpose

Transistors

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−70/SOT−323 which is

designed for low power surface mount applications.

Features

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

BC846

BC847

BC848

65

45

30

V

Collector-Base Voltage

BC846

BC847

BC848

80

50

30

V

Emitter-Base Voltage

BC846

BC847

BC848

6.0

6.0

5.0

V

Collector Current − Continuous

100

mAdc

Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board,

200

mW

Thermal Resistance,

Junction−to−Ambient

620

°C/W

Junction and Storage Temperature

− 55 to

+150

°C

1. FR−5 = 1.0 x 0.75 x 0.062 in.

www.onsemi.com

SC−70/SOT−323

CASE 419

STYLE 3

MARKING DIAGRAM

XX

= Specific Device Code

M

= Month Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

XX M

G

G

COLLECTOR

3

1

BASE

2

EMITTER

1

2

3

See detailed ordering, marking and shipping information in the

package dimensions section on page 12 of this data sheet.

ORDERING INFORMATION