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2SC6097-E Datasheet(PDF) 2 Page - ON Semiconductor |
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2SC6097-E Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 9 page 2SC6097 No. A0412-2/9 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Dissipation PC 0.8 W Tc=25°C15 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=50V, IE=0A 1 μA Emitter Cutoff Current IEBO VEB=4V, IC=0A 1 μA DC Current Gain hFE VCE=2V, IC=100mA 300 600 Gain-Bandwidth Product fT VCE=10V, IC=500mA 390 MHz Output Capacitance Cob VCB=10V, f=1MHz 18 pF Collector-to-Emitter Saturation Voltage VCE(sat)1 IC=1A, IB=50mA 100 150 mV VCE(sat)2 IC=1A, IB=100mA 90 135 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=1A, IB=100mA 0.84 1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=100μA, RBE=0Ω 100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 60 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 6.5 V Turn-On Time ton See specified Test Circuit 35 ns Storage Time tstg 680 ns Fall Time tf 24 ns Switching Time Test Circuit Ordering Information Device Package Shipping memo 2SC6097-E TP 500pcs./bag Pb Free 2SC6097-TL-E TP-FA 700pcs./reel Pb Free VR10 RB VCC=30V IC=10IB1= --10IB2=0.5A VBE= --5V ++ 50 Ω INPUT OUTPUT RL 470 μF 100 μF PW=20 μs IB1 D.C. 1% IB2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. |
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