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ENA0434A Datasheet(PDF) 2 Page - ON Semiconductor |
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ENA0434A Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page 2SC6096 No. A0434-2/6 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current IB 400 mA Collector Dissipation PC When mounted on ceramic substrate (250mm2×0.8mm) 1.3 W Tc=25°C 3.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=80V, IE=0A 1 μA Emitter Cutoff Current IEBO VEB=4V, IC=0A 1 μA DC Current Gain hFE VCE=5V, IC=100mA 300 600 Gain-Bandwidth Product fT VCE=10V, IC=300mA 300 MHz Output Capacitance Cob VCB=10V, f=1MHz 13 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=1A, IB=100mA 100 150 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=1A, IB=100mA 0.85 1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 120 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=100μA, RBE=0Ω 120 V V(BR)CEO IC=1mA, RBE=∞ 100 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 6.5 V Turn-ON Time ton See specified Test Circuit. 40 ns Storage Time tstg 1100 ns Fall Time tf 40 ns Switching Time Test Circuit Ordering Information Device Package Shipping memo 2SC6096-TD-E PCP 1,000pcs./reel Pb Free 2SC6096-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free VR10 RB VCC=50V IC=10IB1= --10IB2=0.5A VBE= --5V + + 50Ω INPUT OUTPUT RL 100μF 470μF PW=20μs IB1 D.C.≤1% IB2 2.0 1.6 1.2 0.8 0.4 0.2 1.8 1.4 1.0 0.6 0 2.0 1.6 1.2 0.4 0.2 0.8 1.8 1.4 0.6 1.0 0 0.2 0.1 0 0.4 0.6 0.8 0.3 0.5 0.7 0.9 1.0 IT11115 10mA 20mA 40mA 80mA IB=0mA 5mA 2mA VCE=5V 0 0.2 0.4 0.6 0.8 1.2 1.0 IT11116 60mA IC -- VCE Collector-to-Emitter Voltage, VCE -- V IC -- VBE Base-to-Emitter Voltage, VBE -- V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. |
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