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2SB1121S-TD-E Datasheet(PDF) 2 Page - ON Semiconductor

Part # 2SB1121S-TD-E
Description  Bipolar Transistor -25V, -2A, Low VCE(sat) PNP Single PCP
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SB1121S-TD-E Datasheet(HTML) 2 Page - ON Semiconductor

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2SB1121
No. 1787-2/4
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Collector Dissipation
PC
500
mW
When mounted on ceramic substrate (250mm
2×0.8mm)
1.3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55 to +150
°C
Electrical Characteristics at Ta
= 25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=-20V, IE=0A
-0.1
μA
Emitter Cutoff Current
IEBO
VEB=-4V, IC=0A
-0.1
μA
DC Current Gain
hFE1
VCE=-2V, IC=-100mA
140*
400*
hFE2
VCE=-2V, IC=-1.5A
65
Gain-Bandwidth Product
fT
VCE=-10V, IC=-50mA
150
MHz
Output Capacitance
Cob
VCB=-10V, f=1MHz
32
pF
Collector to Emitter Saturation Voltage
VCE(sat)
IC=-1.5A, IB=-75mA
-0.35
-0.6
V
Base to Emitter Saturation Voltage
VBE(sat)
IC=-1.5A, IB=-75mA
-0.85
-1.2
V
Collector to Base Breakdown Voltage
V(BR)CBO
IC=-10μA, IE=0A
-30
V
Collector to Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA, RBE=∞
-25
V
Emitter to Base Breakdown Voltage
V(BR)EBO
IE=-10μA, IC=0A
-6
V
Turn-ON Time
ton
See specified Test Circuit
60
ns
Storage Time
tstg
350
ns
Fall Time
tf
25
ns
*: The 2SB1121 is classified by 100mA hFE as follows:
Rank
S
T
hFE
140 to 280
200 to 400
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
Memo
2SB1121S-TD-E
2SB1121T-TD-E
PCP
1,000pcs./reel
Pb-Free
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


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