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IRFHM4231PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFHM4231PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 9 page IRFHM4231TRPbF 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014 D S G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V VGS = 0V, ID = 250µA BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 2.7 3.4 m VGS = 10V, ID = 30A ––– 3.7 4.6 VGS = 4.5V, ID = 30A VGS(th) Gate Threshold Voltage 1.1 1.6 2.1 V VDS = VGS, ID = 35µA VGS(th) Gate Threshold Voltage Coefficient ––– -5.4 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 20V, VGS = 0V IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 120 ––– ––– S VDS = 10V, ID = 30A Qg Total Gate Charge ––– 20 ––– nC VGS = 10V, VDS = 13V, ID = 30A Qg Total Gate Charge ––– 9.7 15 Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.9 ––– VDS = 13V Qgs2 Post-Vth Gate-to-Source Charge ––– 1.2 ––– nC VGS = 4.5V Qgd Gate-to-Drain Charge ––– 3.6 ––– ID = 30A Qgodr Gate Charge Overdrive ––– 3.0 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 4.8 ––– Qoss Output Charge ––– 9.6 ––– nC VDS = 16V, VGS = 0V RG Gate Resistance ––– 1.4 ––– td(on) Turn-On Delay Time ––– 8.7 ––– VDD = 13V, VGS = 4.5V tr Rise Time ––– 28 ––– ns ID = 30A td(off) Turn-Off Delay Time ––– 12 ––– RG=1.8 tf Fall Time ––– 5.9 ––– Ciss Input Capacitance ––– 1270 ––– VGS = 0V Coss Output Capacitance ––– 360 ––– pF VDS = 13V Crss Reverse Transfer Capacitance ––– 97 ––– ƒ = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 42 mJ IAR Avalanche Current ––– A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 40 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 288 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 30A, VGS = 0V trr Reverse Recovery Time ––– 16 24 ns TJ = 25°C, IF = 30A, VDD = 13V Qrr Reverse Recovery Charge ––– 13 20 nC di/dt = 280A/µs 30 Parameter Typ. Max. Units RJC (Bottom) Junction-to-Case ––– 4.3 RJC (Top) Junction-to-Case ––– 37 °C/W RJA Junction-to-Ambient ––– 47 RJA (<10s) Junction-to-Ambient ––– 31 Thermal Resistance |
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