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IRFHM4231PBF Datasheet(PDF) 2 Page - International Rectifier

Part # IRFHM4231PBF
Description  Compatible with Existing Surface Mount Techniques
Download  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFHM4231PBF Datasheet(HTML) 2 Page - International Rectifier

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IRFHM4231TRPbF
2
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 5, 2014
D
S
G
Static @ TJ = 25°C (unless otherwise specified)
  
 
 
Parameter
Min.
Typ.
Max.
Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
25
–––
–––
V
VGS = 0V, ID = 250µA
BVDSS/TJ
Breakdown Voltage Temp. Coefficient
–––
22
–––
mV/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.7
3.4
m
 VGS = 10V, ID = 30A 
–––
3.7
4.6
VGS = 4.5V, ID = 30A 
VGS(th)
Gate Threshold Voltage
1.1
1.6
2.1
V
VDS = VGS, ID = 35µA
VGS(th)
Gate Threshold Voltage Coefficient
–––
-5.4
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
VDS = 20V, VGS = 0V
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
gfs
Forward Transconductance
120
–––
–––
S
VDS = 10V, ID = 30A
Qg
Total Gate Charge
–––
20
–––
nC
VGS = 10V, VDS = 13V, ID = 30A
Qg
Total Gate Charge
–––
9.7
15
Qgs1
Pre-Vth Gate-to-Source Charge
–––
1.9
–––  
VDS = 13V
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.2
–––
nC
VGS = 4.5V
Qgd
Gate-to-Drain Charge
–––
3.6
–––  
ID = 30A
Qgodr
Gate Charge Overdrive
–––
3.0
–––  
Qsw
Switch Charge (Qgs2 + Qgd)
–––
4.8
–––  
Qoss
Output Charge
–––
9.6
–––
nC
VDS = 16V, VGS = 0V
RG
Gate Resistance
–––
1.4
–––
 
td(on)
Turn-On Delay Time
–––
8.7
–––
VDD = 13V, VGS = 4.5V
tr
Rise Time
–––
28
–––
ns
ID = 30A
td(off)
Turn-Off Delay Time
–––
12
–––  
RG=1.8
tf
Fall Time
–––
5.9
–––  
Ciss
Input Capacitance
–––
1270
–––
VGS = 0V
Coss
Output Capacitance
–––
360
–––
pF
VDS = 13V
Crss
Reverse Transfer Capacitance
–––
97
–––  
ƒ = 1.0MHz
Avalanche Characteristics
  
 
 
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy 
–––
42
mJ
IAR
Avalanche Current 
–––
A
Diode Characteristics
  
 
 
Parameter
Min.
Typ.
Max.
Units
Conditions
IS
Continuous Source Current
–––
–––
40
A
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
–––
–––
288
integral reverse
(Body Diode) 
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.0
V
TJ = 25°C, IS = 30A, VGS = 0V 
trr
Reverse Recovery Time
–––
16
24
ns
TJ = 25°C, IF = 30A, VDD = 13V
Qrr
Reverse Recovery Charge
–––
13
20
nC
di/dt = 280A/µs 
30
  
 
Parameter
Typ.
Max.
Units
RJC (Bottom) Junction-to-Case 
–––
4.3
RJC (Top)
Junction-to-Case 
–––
37
°C/W
RJA
Junction-to-Ambient 
–––
47
RJA (<10s)
Junction-to-Ambient 
–––
31
Thermal Resistance


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