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PBSS4041NX Datasheet(PDF) 5 Page - NXP Semiconductors |
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PBSS4041NX Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 14 page NXP Semiconductors PBSS4041NX 60 V, 6.2 A NPN low VCEsat (BISS) transistor PBSS4041NX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 11 December 2012 5 / 14 006aac177 10- 5 10 10- 2 10- 4 102 10- 1 tp (s) 10- 3 103 1 10 1 102 Zth(j-a) (K/W) 10- 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 Ceramic PCB, Al2O3, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VCB = 60 V; IE = 0 A; Tamb = 25 °C - - 100 nA ICBO collector-base cut-off current VCB = 60 V; IE = 0 A; Tj = 150 °C - - 50 µA ICES collector-emitter cut-off current VCE = 48 V; VBE = 0 V; Tamb = 25 °C - - 100 nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 100 nA VCE = 2 V; IC = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 300 500 - VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 300 500 - VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 250 450 - VCE = 2 V; IC = 4 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 150 250 - hFE DC current gain VCE = 2 V; IC = 6 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 75 120 - IC = 1 A; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 35 50 mV VCEsat collector-emitter saturation voltage IC = 1 A; IB = 10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 50 80 mV |
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Similar Description - PBSS4041NX_15 |
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