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PBSS4041NX Datasheet(PDF) 5 Page - NXP Semiconductors

Part # PBSS4041NX
Description  60 V, 6.2 A NPN low VCEsat (BISS) transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBSS4041NX Datasheet(HTML) 5 Page - NXP Semiconductors

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NXP Semiconductors
PBSS4041NX
60 V, 6.2 A NPN low VCEsat (BISS) transistor
PBSS4041NX
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
11 December 2012
5 / 14
006aac177
10- 5
10
10- 2
10- 4
102
10- 1
tp (s)
10- 3
103
1
10
1
102
Zth(j-a)
(K/W)
10- 1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
Ceramic PCB, Al2O3, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCB = 60 V; IE = 0 A; Tamb = 25 °C
-
-
100
nA
ICBO
collector-base cut-off
current
VCB = 60 V; IE = 0 A; Tj = 150 °C
-
-
50
µA
ICES
collector-emitter cut-off
current
VCE = 48 V; VBE = 0 V; Tamb = 25 °C
-
-
100
nA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
100
nA
VCE = 2 V; IC = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
300
500
-
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
300
500
-
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
250
450
-
VCE = 2 V; IC = 4 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
150
250
-
hFE
DC current gain
VCE = 2 V; IC = 6 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
75
120
-
IC = 1 A; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
35
50
mV
VCEsat
collector-emitter
saturation voltage
IC = 1 A; IB = 10 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
50
80
mV


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