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IRFH8321PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFH8321PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFH8321PbF www.irf.com © 2012 International Rectifier August 3, 2012 2 D S G Thermal Resistance Parameter Typ. Max. Units RqJC (Bottom) Junction-to-Case f ––– 2.3 RqJC (Top) Junction-to-Case f ––– 31 °C/W RqJA Junction-to-Ambient g ––– 37 RqJA (<10s) Junction-to-Ambient g ––– 25 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 19.7 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 3.9 4.9 ––– 5.4 6.8 VGS(th) Gate Threshold Voltage 1.2 1.7 2.2 V VGS(th) Gate Threshold Voltage Coefficient ––– -6.4 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 68 ––– ––– S Qg Total Gate Charge ––– 39 59 nC Qg Total Gate Charge ––– 19.4 29.1 Qgs1 Pre-Vth Gate-to-Source Charge ––– 5.0 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.9 ––– Qgd Gate-to-Drain Charge ––– 6.7 ––– Qgodr Gate Charge Overdrive ––– 5.8 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 8.6 ––– Qoss Output Charge ––– 16.7 ––– nC RG Gate Resistance ––– 0.9 2.7 td(on) Turn-On Delay Time ––– 14 ––– tr Rise Time ––– 20 ––– td(off) Turn-Off Delay Time ––– 12 ––– tf Fall Time ––– 6.8 ––– Ciss Input Capacitance ––– 2600 ––– Coss Output Capacitance ––– 530 ––– Crss Reverse Transfer Capacitance ––– 270 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 12 18 ns Qrr Reverse Recovery Charge ––– 20 30 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance m ID = 20A ID = 20A ƒ = 1.0MHz VDD = 15V, VGS = 4.5V Typ. VGS = -20V ––– VDS = 10V, ID = 20A di/dt = 500 A/μs eà TJ = 25°C, IS = 20A, VGS = 0V e showing the integral reverse p-n junction diode. ––– TJ = 25°C, IF = 20A, VDD = 15V Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 20A e VDS = 24V, VGS = 0V VGS = 4.5V, ID = 16A e VDS = VGS, ID = 50μA ––– ––– 332 ––– ––– MOSFET symbol A VDS = 16V, VGS = 0V pF VDS = 24V, VGS = 0V, TJ = 125°C Max. 93 nC VDS = 15V VGS = 4.5V VGS = 10V, VDS = 15V, ID = 20A VGS = 20V 25i VGS = 0V VDS = 10V Conditions 20 RG=1.8 nA ns |
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