NSBA114YF3T5G datasheet(4/12 Pages) ONSEMI

Part #	NSBA114YF3T5G

Description	PNP Transistors with Monolithic Bias Resistor Network

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Manufacturer	ONSEMI [ON Semiconductor]

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MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3

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4

Table 2. THERMAL CHARACTERISTICS

Characteristic

Unit

Max

Symbol

THERMAL CHARACTERISTICS (SOT−1123) (NSBA114YF3)

Total Device Dissipation

TA = 25°C

(Note 3)

(Note 4)

Derate above 25°C

(Note 3)

(Note 4)

PD

254

297

2.0

2.4

mW

mW/°C

Thermal Resistance,

(Note 3)

Junction to Ambient

(Note 4)

RqJA

493

421

°C/W

Thermal Resistance, Junction to Lead

(Note 3)

RqJL

193

°C/W

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

1. FR−4 @ Minimum Pad.

2. FR−4 @ 1.0 x 1.0 Inch Pad.

3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.

4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.

Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current

(VCB = 50 V, IE = 0)

ICBO

−

100

nAdc

Collector−Emitter Cutoff Current

(VCE = 50 V, IB = 0)

ICEO

−

500

nAdc

Emitter−Base Cutoff Current

(VEB = 6.0 V, IC = 0)

IEBO

−

0.2

mAdc

Collector−Base Breakdown Voltage

(IC = 10 mA, IE = 0)

V(BR)CBO

50

−

Vdc

Collector−Emitter Breakdown Voltage (Note 5)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

50

−

Vdc

ON CHARACTERISTICS

DC Current Gain (Note 5)

(IC = 5.0 mA, VCE = 10 V)

hFE

80

140

−

Collector *Emitter Saturation Voltage (Note 5)

(IC = 10 mA, IB = 0.3 mA)

VCE(sat)

−

0.25

Vdc

Input Voltage (off)

(VCE = 5.0 V, IC = 100 mA)

Vi(off)

−

0.7

−

Vdc

Input Voltage (on)

(VCE = 0.2 V, IC = 1.0 mA)

Vi(on)

−

0.9

−

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

VOL

−

0.2

Vdc

Output Voltage (off)

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

VOH

4.9

−

Vdc

Input Resistor

R1

7.0

10

13

kW

Resistor Ratio

R1/R2

0.17

0.21

0.25

5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.

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