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IRFH4251DPBF Datasheet(PDF) 5 Page - International Rectifier

Part # IRFH4251DPBF
Description  Control and synchronous MOSFETs in one package
Download  13 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFH4251DPBF Datasheet(HTML) 5 Page - International Rectifier

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IRFH4251DPbF
Q1 - Control FET
Q2 - Synchronous FET
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
5
10
15
20
25
30
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VDS= 20V
VDS= 13V
ID= 30A
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VDS= 20V
VDS= 13V
ID= 30A
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
1msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
DC
Limited by package
Fig 11. Maximum Safe Operating Area
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
10000
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
1msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
DC
Limited by package
Fig 12. Maximum Safe Operating Area
5
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© 2014 International Rectifier
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May 20, 2014


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