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IRFB7546PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFB7546PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 10 page 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 IRFB7546PbF Absolute Maximum Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 75 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 53 IDM Pulsed Drain Current 300 PD @TC = 25°C Maximum Power Dissipation 99 W Linear Derating Factor 0.7 W/°C VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy 110 mJ EAS (Thermally limited) Single Pulse Avalanche Energy 170 IAR Avalanche Current See Fig 15, 16, 23a, 23b A EAR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 1.52 RCS Case-to-Sink, Flat Greased Surface 0.50 ––– RJA Junction-to-Ambient ––– 62 °C/W Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 46 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) ––– 6.0 7.3 m VGS = 10V, ID = 45A ––– 7.5 ––– VGS = 6.0V, ID = 23A VGS(th) Gate Threshold Voltage 2.1 ––– 3.7 V VDS = VGS, ID = 100µA IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS =60 V, VGS = 0V ––– ––– 150 VDS =60V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 1.6 ––– Static Drain-to-Source On-Resistance Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 110µH, RG = 50, IAS = 45A, VGS =10V. ISD 100A, di/dt 1260A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.: http://www.irf.com/technical-info/appnotes/an-994.pdf Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 19A, VGS =10V |
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