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P4C1981L-20DM Datasheet(PDF) 6 Page - Pyramid Semiconductor Corporation |
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P4C1981L-20DM Datasheet(HTML) 6 Page - Pyramid Semiconductor Corporation |
6 / 13 page P4C1981/1981L, P4C1982/1982L Page 6 of 13 Document # SRAM114 REV B AC CHARACTERISTICS—WRITE CYCLE (V CC = 5V ± 10%, All Temperature Ranges) (2) Parameter Symbol –10 –12 –15 –20 –25 –35 –45 Min Max Max Max Max Max Max Max Min Min Min Min Min Min t WC t CW t AW t AS Write Cycle Time Chip Enable Time to End of Write Address Valid to End of Write Address Set-up Time t WZ t DH t DW t AH t WP Write Pulse Width Address Hold Time from End of Write Data Valid to End of Write Data Hold Time Write Enable to Output in High Z t OW Output Active from End of Write 10 7 7 0 8 0 5 0 2 5 12 8 8 0 9 0 6 0 2 6 13 10 10 0 10 0 7 0 2 7 15 15 15 0 15 0 10 0 2 8 20 20 20 0 20 0 13 0 2 10 30 30 25 0 25 0 15 0 2 10 40 35 35 0 35 0 20 0 2 15 Unit ns ns ns ns ns ns ns ns ns ns t AWE t ADV Write Enable to Data-out Valid (P4C1981) Data-in Valid to Data-out Valid (P4C1981) ns ns 10 10 12 12 13 13 18 18 20 30 35 35 30 20 WRITE CYCLE NO. 1 (WITH OE OE OE OE OE HIGH) |
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