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PYA28HC256E-70LM Datasheet(PDF) 1 Page - Pyramid Semiconductor Corporation |
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PYA28HC256E-70LM Datasheet(HTML) 1 Page - Pyramid Semiconductor Corporation |
1 / 15 page Document # EEPROM106 REV 03 Revised October 2014 PYA28HC256 HIGH SPEED 32K x 8 EEPROM FEATURES Access Times of 70, 90 and 120ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 mA Standby Current Fast Write Cycle Times Software Data Protection CMOS & TTL Compatible Inputs and Outputs Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional) Data Retention: 10 Years Available in the following package: – 28-Pin 600 mil Ceramic DIP – 32-Pin Ceramic LCC (450x550 mils) FUnCTIOnAL BLOCk DIAgRAM PIn COnFIgURATIOn DIP (C5-1) DESCRIPTIOn The PYA28HC256 is a 5 Volt 32Kx8 EEPROM. The device supports 64-byte page write operation. The PYA28HC256 features DATA and Toggle Bit Polling as well as a system software scheme used to indicate early completion of a Write Cycle. The device also includes user-optional soft- ware data protection. Data Retention is 10 Years. The device is available in a 28-Pin 600 mil wide Ceramic DIP and 32-Pin LCC. LCC (L6) |
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