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PYA28HC256E-90CWM Datasheet(PDF) 5 Page - Pyramid Semiconductor Corporation |
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PYA28HC256E-90CWM Datasheet(HTML) 5 Page - Pyramid Semiconductor Corporation |
5 / 15 page PYA28HC256 - HIGH SPEED 32K x 8 EEPROM Page 5 Document # EEPROM106 REV 03 Sym Parameter -70 -90 -120 Unit Min Max Min Max Min Max t AVAV Read Cycle Time 70 90 120 ns t AVQV Address Access Time 70 90 120 ns t ELQV Chip Enable Access Time 70 90 120 ns t OLQV Output Enable Access Time 35 40 50 ns t ELQx Chip Enable to Output in Low Z 0 0 0 ns t EHQZ Chip Disable to to Output in High Z 35 40 50 ns t OLQx Output Enable to Output in Low Z 0 0 0 ns t OHQZ Output Disable to Output in High Z 35 40 50 ns t AVQx Output Hold from Address Change 0 0 0 ns AC ELECTRICAL CHARACTERISTICS—READ CYCLE (V CC = 5V ± 10%, All Temperature Ranges) (2) TIMIng WAVEFORM OF READ CYCLE POWER-UP TIMIng Symbol Parameter Max Unit t PUR Power-up to Read operation 100 µs t PUW Power-up to Write operation 5 ms |
Similar Part No. - PYA28HC256E-90CWM |
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Similar Description - PYA28HC256E-90CWM |
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