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P4C1257L55FC Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation

Part # P4C1257L55FC
Description  ULTRA HIGH SPEED 256K x 1 STATIC CMOS RAMS
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Manufacturer  PYRAMID [Pyramid Semiconductor Corporation]
Direct Link  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C1257L55FC Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation

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P4C1257/P4C1257L - ULTRA HIGH SPEED 256K X 1 STATIC CMOS RAMS
Page 3
Document # SRAM137 REV 01
Sym Parameter
-12
-15
-20
-25
-35
-45
-55
-70
Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max
t
RC
Read Cycle
Time
12
15
20
25
35
45
55
70
ns
t
AA
Address Ac-
cess Time
12
15
20
25
35
45
55
70
ns
t
AC
Chip Enable
Access Time
12
15
20
25
35
45
55
70
ns
t
OH
Output Hold
from Address
Change
2
2
2
2
2
2
2
2
ns
t
LZ
Chip Enable
to Output in
Low Z
2
2
2
2
2
2
2
2
ns
t
HZ
Chip Disable
to Output in
High Z
6
8
10
12
17
20
25
30
ns
t
PU
Chip Enable
to Power Up
Time
0
0
0
0
0
0
0
0
ns
t
PD
Chip Disable to
Power Down
12
15
20
25
35
45
55
70
ns
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
TIMIng WAVEFORM OF READ CYCLE nO. 1 (ADDRESS COnTROLLED)(5,6)
DATA RETEnTIOn CHARACTERISTICS (P4C1257L)
Sym Parameter
Test Conditions
Min
Typ* V
CC=
Max V
CC=
Unit
2.0V
3.0V
2.0V
3.0V
V
DR
V
CC for Data Retention
2.0
V
I
CCDR
Data Retention Current
CE ≥ V
CC -0.2V,
V
IN ≥ VCC -0.2V
or V
IN ≤ 0.2V
10
15
600
900
µA
t
CDR
Chip Deselect to Data Retention Time
0
ns
t
R
Operation Recovery Time
t
RC
§
ns
* T
A = +25°C
§ t
RC = Read Cycle Time
† This Parameter is guaranteed but not tested


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