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P4C164LL-8003ILF Datasheet(PDF) 5 Page - Pyramid Semiconductor Corporation |
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P4C164LL-8003ILF Datasheet(HTML) 5 Page - Pyramid Semiconductor Corporation |
5 / 10 page P4C164LL - VERY LOW POWER 8K x 8 STATIC CMOS RAM Page 5 Document # SRAM116 REV 04 AC CHARACTERISTICS—WRITE CYCLE (Over Recommended Operating Temperature & Supply Voltage) Symbol Parameter -80 -90 -100 -120 Unit Min Max Min Max Min Max Min Max t WC Write Cycle Time 80 90 100 120 ns t CW Chip Enable Time to End of Write 70 80 80 100 ns t AW Address Valid to End of Write 70 80 80 100 ns t AS Address Setup Time 0 0 0 0 ns t WP Write Pulse Width 60 60 60 60 ns t AH Address Hold Time 0 0 0 0 ns t DW Data Valid to End of Write 40 40 40 40 ns t DH Data Hold Time 0 0 0 0 ns t WZ Write Enable to Output in High Z 30 30 30 30 ns t OW Output Active from End of Write 10 10 10 10 ns TIMIng WAVEFORM OF WRITE CYCLE nO. 1 (WE COnTROLLED)(6) Notes: 11. CE 1 and WE must be LOW, and CE2 HIGH for WRITE cycle. 12. OE is LOW for this WRITE cycle to show t WZ and tOW. 13. If CE 1 goes HIGH, or CE2 goes LOW, simultaneously with WE HIGH, the output remains in a high impedance state 14. Write Cycle Time is measured from the last valid address to the first transitioning address. |
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