P4C107-10J4C datasheet(2/8 Pages) PYRAMID

Part #	P4C107-10J4C

Description	ULTRA HIGH SPEED 1M x 1 STATIC CMOS RAM

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Manufacturer	PYRAMID [Pyramid Semiconductor Corporation]

Direct Link	http://www.pyramidsemiconductor.com

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P4C107 - ULTRA HIGH SPEED 1M X 1 STATIC CMOS RAM

Page 2

Document # SRAM139 REV OR

DC ELECTRICAL CHARACTERISTICS

(Over Recommended Operating Temperature & Supply Voltage)(2)

Sym Parameter

Value

Unit

V

CC

Power Supply Pin with

Respect to GND

-0.5 to +6

V

TERM

Terminal Voltage with

Respect to GND (up to

6.0V)

-0.5 to V

CC + 0.5

V

T

A

Operating Temperature

-55 to +125

°C

T

BIAS

Temperature Under Bias

-55 to +125

°C

T

STG

Storage Temperature

-65 to +150

°C

P

T

Power Dissipation

1.0

W

I

OUT

DC Output Current

50

mA

MAxIMUM RATIngS(1)

RECOMMEnDED OPERATIng COnDITIOnS

grade(2)

Ambient Temp

gnD

V

CC

Commercial

0°C to +70°C

0V

5.0V ± 10%

Industrial

-40°C to +85°C

0V

5.0V ± 10%

CAPACITAnCES(4)

(V

CC = 5.0V, TA = 25°C, f = 1.0MHz)

Sym

Parameter

Conditions Typ Unit

C

IN

Input Capacitance

V

IN=0V

7

pF

C

OUT

Output Capacitance

V

OUT=0V

10

pF

Sym Parameter

Test Conditions

Min

Max

Unit

V

IH

Input High Voltage

2.2

V

CC + 0.5

V

IL

Input Low Voltage

-0.5(3)

0.8

V

OL

Output Low Voltage (TTL

Load)

I

OL = +8 mA, VCC = Min

0.4

V

OH

Output High Voltage (TTL

Load)

I

OH = -4 mA, VCC = Min

2.4

V

I

LI

Input Leakage Current

V

CC = Max,

V

IN = GND to VCC

-5

+5

µA

I

LO

Output Leakage Current

V

CC = Max, CE = VIH,

V

OUT = GND to VCC

-5

+5

µA

I

CC

Operating Supply Current

V

CC = Max, IOUT=0 mA, f=Max

150

mA

I

SB

Standby Power Supply

Current (TTL Input Levels)

CE ≥ V

IH, VCC = Max, f = Max,

Outputs Open

50

mA

I

SB1

Standby Power Supply

Current (CMOS Input

Levels)

CE ≥ V

HC, VCC = Max, f = 0,

Outputs Open

V

IN ≤ VLC or VIN ≥ VHC

3

mA

N/A = Not applicable

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