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IRF9910PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF9910PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF9910PbF 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage Q1&Q2 20 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient Q1 ––– 0.0061 ––– V/°C Q2 ––– 0.014 ––– Q1 ––– 10.7 13.4 RDS(on) Static Drain-to-Source On-Resistance ––– 14.6 18.3 m Ω Q2 ––– 7.4 9.3 ––– 9.1 11.3 VGS(th) Gate Threshold Voltage Q1&Q2 1.65 ––– 2.55 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient Q1 ––– -4.9 ––– mV/°C Q2 ––– -5.0 ––– IDSS Drain-to-Source Leakage Current Q1&Q2 ––– ––– 1.0 µA Q1&Q2 ––– ––– 100 IGSS Gate-to-Source Forward Leakage Q1&Q2 ––– ––– 100 nA Gate-to-Source Reverse Leakage Q1&Q2 ––– ––– -100 gfs Forward Transconductance Q1 19 ––– ––– S Q2 27 ––– ––– Qg Total Gate Charge Q1 ––– 7.4 11 Q2 ––– 15 23 Qgs1 Pre-Vth Gate-to-Source Charge Q1 ––– 2.6 ––– Q1 Q2 ––– 4.3 ––– VDS = 10V Qgs2 Post-Vth Gate-to-Source Charge Q1 ––– 0.85 ––– nC VGS = 4.5V, ID = 8.3A Q2 ––– 1.4 ––– Qgd Gate-to-Drain Charge Q1 ––– 2.5 ––– Q2 Q2 ––– 5.4 ––– VDS = 10V Qgodr Gate Charge Overdrive Q1 ––– 1.5 ––– VGS = 4.5V, ID = 9.8A Q2 ––– 3.9 ––– Qsw Switch Charge (Qgs2 + Qgd) Q1 ––– 3.4 ––– Q2 ––– 6.8 ––– Qoss Output Charge Q1 ––– 4.0 ––– nC Q2 ––– 8.7 ––– td(on) Turn-On Delay Time Q1 ––– 6.3 ––– Q2 ––– 8.3 ––– tr Rise Time Q1 ––– 10 ––– ID = 8.3A Q2 ––– 14 ––– ns td(off) Turn-Off Delay Time Q1 ––– 9.2 ––– Q2 ––– 15 ––– tf Fall Time Q1 ––– 4.5 ––– ID = 9.8A Q2 ––– 7.5 ––– Ciss Input Capacitance Q1 ––– 900 ––– Q2 ––– 1860 ––– Coss Output Capacitance Q1 ––– 290 ––– pF Q2 ––– 600 ––– Crss Reverse Transfer Capacitance Q1 ––– 140 ––– Q2 ––– 310 ––– Avalanche Characteristics Parameter Q1 Max. Q2 Max. Units EAS Single Pulse Avalanche Energy d 33 26 mJ IAR Avalanche Current 8.3 9.8 A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current Q1&Q2 ––– ––– 2.5 A (Body Diode) ISM Pulsed Source Current Q1 ––– ––– 83 A (Body Diode) Ã Q2 ––– ––– 98 VSD Diode Forward Voltage Q1 ––– ––– 1.0 V Q2 ––– ––– 1.0 trr Reverse Recovery Time Q1 ––– 11 17 ns Q2 ––– 16 24 Qrr Reverse Recovery Charge Q1 ––– 3.1 4.7 nC Q2 ––– 4.9 7.3 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 10A e MOSFET symbol VDS = 10V, VGS = 0V Q1 VGS = 20V VGS = -20V VDS = 16V, VGS = 0V Conditions Q2 Q1 TJ = 25°C, IF = 8.3A, VDD = 10V, di/dt = 100A/µs e TJ = 25°C, IS = 8.3A, VGS = 0V e showing the integral reverse p-n junction diode. TJ = 25°C, IS = 9.8A, VGS = 0V e Q2 TJ = 25°C, IF = 9.8A, VDD = 10V, di/dt = 100A/µs e VDD = 16V, VGS = 4.5V ––– VDS = 10V Clamped Inductive Load VGS = 0V ƒ = 1.0MHz Typ. ––– VGS = 4.5V, ID = 8.3A e VGS = 4.5V, ID = 9.8A e VDS = 10V, ID = 9.8A VDD = 16V, VGS = 4.5V VGS = 10V, ID = 12A e VDS = VGS, ID = 250µA VDS = 10V, ID = 8.3A VDS = 16V, VGS = 0V, TJ = 125°C |
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