High Power GaAs SPDT Switch

DC - 2.5 GHz

SW-279

V2.00

M/A-COM, Inc.

North America:

Tel. (800) 366-2266

s

Asia/Pacific: Tel. +81 3 3263 8761

s

Europe: Tel. +44 (1344) 869 595

Fax (800) 618-8883

Fax +81 3 3263 8769

Fax +44 (1344) 300 020

1

Specifications Subject to Change Without Notice.

Model No.

Package

SW-279 PIN

SOIC 8 Lead

SW-279TR

Forward Tape & Reel

SW-279RTR

Reverse Tape & Reel

Features

• +36 dBm Typ. 1 dB Compression Point, -8V Supply

• +65 dBm Typ. 3rd Order Intercept Point, -8V Supply

• Low Insertion Loss: 0.4 dB Typical

• Low Power Consumption: 100 µW

• Fast Switching Speed

• Low Cost SOIC8 Plastic Package

Description

M/A-COM’s SW-279 is a GaAs MMIC SPDT switch in a low cost

SOIC 8-lead surface mount plastic package. The SW-279 is ideal-

ly suited for use where very low power consumption is

required. Typical applications include transmit/receive switch-

ing, switch matrices, and filter banks in systems such as: radio

and cellular equipment, PCM, GPS, fiber optic modules, and

other battery powered radio equipment.

The SW-279 is fabricated with a monolithic GaAs MMIC using a

mature 1 micron process. The process features full chip passiva-

tion for increased performance and reliability.

Electrical Specifications, T

0°-8°

.0075-0.0098

(0.19-0.25)

.1890-.1968

(4.80-5.00)

.0099-0.0196

x 45° Chamfer

(0.25-0.50)

.2284-.2440

(5.80-6.20)

PIN 8

Orientation

mark

PIN 1

8- Lead SOP outline dimensions

Narrow body .150

(All dimensions per JEDEC No. MS-012-AA, Issue C)

Dimensions in ( ) are in mm.

.1497-.1574

(3.80-4.00)

- B -

- A -

.050(1.27) BSC.

.013-.020 TYP.

(0.33-0.51)

.0040-.0098

(0.10-0.25)

- C -

.0532-.0688

(1.35-1.75)

.016-.050

(0.40-1.27)

.010(0.25) M B M

.010(0.25) M C A M B S

Unless Otherwise Noted: .xxx = ± 0.010 (.xx = ± 0.25)

.xx = ± 0.02 (.x = ±0.5)

.004 (0.10)

SO-8

1. Refer to “Tape and Reel Packaging” Section, or contact factory.

2. All specifications apply when operated with bias voltages of 0V for Vin Low and 5 to 10V for Vin Hi, and 50 Ohm impedance at all RF ports,

unless otherwise specified. High power (greater than 1W) handling specifications apply to cold switches only. For input powers under 1W, hot

switching can be used. The high control voltage must be within +/- 0.2V of the supply voltage. The RF ports must be blocked outside of the

package from ground or any other voltage.

Parameter

Unit

Min.

Typ.

Max

Insertion Loss

DC – 2.0 GHz

dB

0.6

0.8

DC – 1.0 GHz

dB

0.4

0.6

DC – 0.5 GHz

dB

0.35

0.5

DC – 0.1 GHz

dB

0.2

0.4

Isolation

DC – 2.0 GHz

dB

14

16

DC – 1.0 GHz

dB

28

32

DC – 0.5 GHz

dB

35

38

DC – 0.1 GHz

dB

35

38

VSWR

DC – 2.0 GHz

1.2:1

Trise, Tfall

10% to 90% RF, 90% to 10% RF

nS

30

Ton, Toff

50% Control to 90% RF, 50% Control to 10% RF

nS

35

Transients

In Band

mV

12

One dB

Input Power (5V Supply/Control)

0.9 GHz

dBm

33

Compression Point

Input Power (8V Supply/Control)

0.9 GHz

dBm

35.8

3rd Order

Measured Relative (5V Supply/Control)

0.9 GHz

dBm

61

Intercept

to Input Power (8V Supply/Control)

0.9 GHz

dBm

65

(for two-tone input power up to +10 dBm)

Ordering Information