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SW-279RTR Datasheet(PDF) 1 Page - Tyco Electronics |
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SW-279RTR Datasheet(HTML) 1 Page - Tyco Electronics |
1 / 2 page High Power GaAs SPDT Switch DC - 2.5 GHz SW-279 V2.00 M/A-COM, Inc. North America: Tel. (800) 366-2266 s Asia/Pacific: Tel. +81 3 3263 8761 s Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 3 3263 8769 Fax +44 (1344) 300 020 1 Specifications Subject to Change Without Notice. Model No. Package SW-279 PIN SOIC 8 Lead SW-279TR Forward Tape & Reel SW-279RTR Reverse Tape & Reel Features • +36 dBm Typ. 1 dB Compression Point, -8V Supply • +65 dBm Typ. 3rd Order Intercept Point, -8V Supply • Low Insertion Loss: 0.4 dB Typical • Low Power Consumption: 100 µW • Fast Switching Speed • Low Cost SOIC8 Plastic Package • Tape and Reel Packaging Available1 Description M/A-COM’s SW-279 is a GaAs MMIC SPDT switch in a low cost SOIC 8-lead surface mount plastic package. The SW-279 is ideal- ly suited for use where very low power consumption is required. Typical applications include transmit/receive switch- ing, switch matrices, and filter banks in systems such as: radio and cellular equipment, PCM, GPS, fiber optic modules, and other battery powered radio equipment. The SW-279 is fabricated with a monolithic GaAs MMIC using a mature 1 micron process. The process features full chip passiva- tion for increased performance and reliability. Electrical Specifications, T A = +25°C 0°-8° .0075-0.0098 (0.19-0.25) .1890-.1968 (4.80-5.00) .0099-0.0196 x 45° Chamfer (0.25-0.50) .2284-.2440 (5.80-6.20) PIN 8 Orientation mark PIN 1 8- Lead SOP outline dimensions Narrow body .150 (All dimensions per JEDEC No. MS-012-AA, Issue C) Dimensions in ( ) are in mm. .1497-.1574 (3.80-4.00) - B - - A - .050(1.27) BSC. .013-.020 TYP. (0.33-0.51) .0040-.0098 (0.10-0.25) - C - .0532-.0688 (1.35-1.75) .016-.050 (0.40-1.27) .010(0.25) M B M .010(0.25) M C A M B S Unless Otherwise Noted: .xxx = ± 0.010 (.xx = ± 0.25) .xx = ± 0.02 (.x = ±0.5) .004 (0.10) SO-8 1. Refer to “Tape and Reel Packaging” Section, or contact factory. 2. All specifications apply when operated with bias voltages of 0V for Vin Low and 5 to 10V for Vin Hi, and 50 Ohm impedance at all RF ports, unless otherwise specified. High power (greater than 1W) handling specifications apply to cold switches only. For input powers under 1W, hot switching can be used. The high control voltage must be within +/- 0.2V of the supply voltage. The RF ports must be blocked outside of the package from ground or any other voltage. Parameter Test Conditions2 Unit Min. Typ. Max Insertion Loss DC – 2.0 GHz dB 0.6 0.8 DC – 1.0 GHz dB 0.4 0.6 DC – 0.5 GHz dB 0.35 0.5 DC – 0.1 GHz dB 0.2 0.4 Isolation DC – 2.0 GHz dB 14 16 DC – 1.0 GHz dB 28 32 DC – 0.5 GHz dB 35 38 DC – 0.1 GHz dB 35 38 VSWR DC – 2.0 GHz 1.2:1 Trise, Tfall 10% to 90% RF, 90% to 10% RF nS 30 Ton, Toff 50% Control to 90% RF, 50% Control to 10% RF nS 35 Transients In Band mV 12 One dB Input Power (5V Supply/Control) 0.9 GHz dBm 33 Compression Point Input Power (8V Supply/Control) 0.9 GHz dBm 35.8 3rd Order Measured Relative (5V Supply/Control) 0.9 GHz dBm 61 Intercept to Input Power (8V Supply/Control) 0.9 GHz dBm 65 (for two-tone input power up to +10 dBm) Ordering Information |
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