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IRF8327SPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF8327SPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  DirectFET® Power MOSFET Description The IRF8327SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8327SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF8327SPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses. Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate Voltage Typical values (unless otherwise specified) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.1mH, RG = 25Ω, IAS = 11A. Notes: DirectFET® ISOMETRIC SQ l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET application l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested SQ SX ST MQ MX MT MP 0 5 10 15 20 VGS, Gate -to -Source Voltage (V) 0 5 10 15 20 25 ID = 14A TJ = 25°C TJ = 125°C VDSS VGS RDS(on) RDS(on) 30V max ±20V max 5.1mΩ@ 10V 8.5mΩ@ 4.5V 0 5 10 15 20 25 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 VDS= 24V VDS= 15V VDS= 6.0V ID= 11A Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 9.2nC 3.0nC 1.2nC 19nC 7.9nC 1.9V IRF8327SPbF 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 6, 2014 Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche CurrentÃg A 11 Max. 11 60 110 ±20 30 14 62 Form Quantity IRF8327STRPbF DirectFET SQ Tape and Reel 4800 "TR" suffix IRF8327STR1PbF DirectFET SQ Tape and Reel 1000 "TR1" suffix EOL notice # 264 Note Orderable part number Package Type Standard Pack |
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