02/22/05

IRF7726PbF

Absolute Maximum Ratings

www.irf.com

1

Thermal Resistance

Parameter

Max.

Units

Drain-Source Voltage

-30

V

-7.0

-5.7

A

Pulsed Drain Current



-28

Maximum Power Dissipation

ƒ

1.79

W

Maximum Power Dissipation

ƒ

1.14

W

Linear Derating Factor

0.01

W/°C

Gate-to-Source Voltage

±20

V

Junction and Storage Temperature Range

-55 to +150

°C

PD -95992

-30V

-

7.0A

-

6.0A

Parameter

Max.

Units

Maximum Junction-to-Ambient

ƒ

70

°C/W

MICRO-8

Description

fier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the ruggedized device design,

that International Rectifier is well known for, provides

the designer with an extremely efficient and reliable

device for battery and load management.

The new Micro8 package, with half the footprint area

of the standard SO-8, provides the smallest footprint

available in an SOIC outline. This makes the Micro8

an ideal device for applications where printed circuit

board space is at a premium. The low profile (<1.2mm)

of the Micro8 will allow it to fit easily into extremely thin

application environments such as portable electronics

and PCMCIA cards.

Top View

8

1

2

3

4

5

6

7

D

D

D

G

S

A

D

S

S