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IRF7726PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF7726PBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page HEXFET® Power MOSFET 02/22/05 IRF7726PbF Absolute Maximum Ratings www.irf.com 1 Thermal Resistance Parameter Max. Units VDS Drain-Source Voltage -30 V ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -7.0 ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -5.7 A IDM Pulsed Drain Current -28 PD @TA = 25°C Maximum Power Dissipation 1.79 W PD @TA = 70°C Maximum Power Dissipation 1.14 W Linear Derating Factor 0.01 W/°C VGS Gate-to-Source Voltage ±20 V TJ , TSTG Junction and Storage Temperature Range -55 to +150 °C PD -95992 VDSS RDS(on) max ID -30V 0.026@VGS = -10V - 7.0A 0.040@VGS = -4.5V - 6.0A Parameter Max. Units RθJA Maximum Junction-to-Ambient 70 °C/W MICRO-8 Description l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.2mm) l Available in Tape & Reel l Lead-Free HEXFET® Power MOSFETs from International Recti- fier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Top View 8 1 2 3 4 5 6 7 D D D G S A D S S |
Similar Part No. - IRF7726PBF_15 |
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Similar Description - IRF7726PBF_15 |
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