DMG1012UW_15 datasheet(3/6 Pages) DIODES

Part #	DMG1012UW

Description	N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

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3 / 6 page

DMG1012UW

Document number: DS31859 Rev. 3 - 2

3 of 6

www.diodes.com

September 2013

DMG1012UW

0

0.3

0.6

0.9

1.2

1.5

0

1

2

3

4

5

Fig. 1 Typical Output Characteristics

V

, DRAIN-SOURCE VOLTAGE (V)

DS

V

= 1.2V

GS

V

= 1.5V

GS

V

= 2.0V

GS

V

= 2.5V

GS

V

= 3.0V

GS

V

= 4.5V

GS

V

= 8.0V

GS

0

0.3

0.6

0.9

1.2

1.5

0

0.5

1

1.5

2

2.5

3

Fig. 2 Typical Transfer Characteristics

V

, GATE SOURCE VOLTAGE (V)

GS

V

= 5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0

0.3

0.6

0.9

1.2

1.5

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

V

= 1.8V

GS

V

= 4.5V

GS

V

= 2.5V

GS

0

0.1

0.2

0.3

0.4

0.5

0.6

0

0.3

0.6

0.9

1.2

1.5

I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

D

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 4.5V

GS

0.5

0.7

0.9

1.1

1.3

1.5

1.7

Fig. 5 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , JUNCTION TEMPERATURE (°C)

J

V

= 4.5V

I = 1.0A

GS

D

V

= 2.5V

I = 500mA

GS

D

0

0.2

0.4

0.6

0.8

Fig. 6 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , JUNCTION TEMPERATURE (°C)

J

V

= 4.5V

I = 1.0A

GS

D

V

= 2.5V

I = 500mA

GS

D

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