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2N5194G Datasheet(PDF) 2 Page - ON Semiconductor |
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2N5194G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page 2N5194G, 2N5195G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) (IC = 0.1 Adc, IB = 0) 2N5194G 2N5195G VCEO(sus) 60 80 − − Vdc Collector Cutoff Current (VCE = 60 Vdc, IB = 0) 2N5194G (VCE = 80 Vdc, IB = 0) 2N5195G ICEO − − 1.0 1.0 mAdc Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N5194G (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N5195G (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N5194G (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N5195G ICEX − − − − −0.1 0.1 2.0 2.0 mAdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) 2N5194G (VCB = 80 Vdc, IE = 0) 2N5195G ICBO − − 0.1 0.1 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 1.5 Adc, VCE = 2.0 Vdc) 2N5194G 2N5195G (IC = 4.0 Adc, VCE = 2.0 Vdc) 2N5194G 2N5195G hFE 25 20 10 7.0 100 80 − − − Collector−Emitter Saturation Voltage (Note 3) (IC = 1.5 Adc, IB = 0.15 Adc) (IC = 4.0 Adc, IB = 1.0 Adc) VCE(sat) − − 0.6 1.4 Vdc Base−Emitter On Voltage (Note 3) (IC = 1.5 Adc, VCE = 2.0 Vdc) VBE(on) − 1.2 Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT 2.0 − MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC registered data. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. |
Similar Part No. - 2N5194G_13 |
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Similar Description - 2N5194G_13 |
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