2N5194G_13 datasheet(2/6 Pages) ONSEMI

Part #	2N5194G

Description	Silicon PNP Power Transistors 4 AMPERE POWER TRANSISTORS PNP SILICON 60 ??80 VOLTS

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Manufacturer	ONSEMI [ON Semiconductor]

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2N5194G, 2N5195G

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 0.1 Adc, IB = 0)

2N5194G

2N5195G

VCEO(sus)

60

80

−

Vdc

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

2N5194G

(VCE = 80 Vdc, IB = 0)

2N5195G

ICEO

−

1.0

mAdc

Collector Cutoff Current

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)

2N5194G

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)

2N5195G

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)

2N5194G

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)

2N5195G

ICEX

−

−0.1

0.1

2.0

mAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

2N5194G

(VCB = 80 Vdc, IE = 0)

2N5195G

ICBO

−

0.1

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

1.0

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 1.5 Adc, VCE = 2.0 Vdc)

2N5194G

2N5195G

(IC = 4.0 Adc, VCE = 2.0 Vdc)

2N5194G

2N5195G

hFE

25

20

10

7.0

100

80

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 1.5 Adc, IB = 0.15 Adc)

(IC = 4.0 Adc, IB = 1.0 Adc)

VCE(sat)

−

0.6

1.4

Vdc

Base−Emitter On Voltage (Note 3)

(IC = 1.5 Adc, VCE = 2.0 Vdc)

VBE(on)

−

1.2

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

2.0

−

MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Indicates JEDEC registered data.

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

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