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IRF7493PBF Datasheet(PDF) 2 Page - International Rectifier

Part # IRF7493PBF
Description  High frequency DC-DC converters
Download  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7493PBF Datasheet(HTML) 2 Page - International Rectifier

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IRF7493PbF
2
www.irf.com
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
80
–––
–––
V
∆ΒV
DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.074
–––
mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
11.5
15
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Forward Transconductance
13
–––
–––
S
Qg
Total Gate Charge
–––
35
53
Qgs
Gate-to-Source Charge
–––
5.7
–––
Qgd
Gate-to-Drain Charge
–––
12
–––
td(on)
Turn-On Delay Time
–––
8.3
–––
tr
Rise Time
–––
7.5
–––
td(off)
Turn-Off Delay Time
–––
30
–––
ns
tf
Fall Time
–––12–––
Ciss
Input Capacitance
–––
1510
–––
Coss
Output Capacitance
–––
320
–––
pF
Crss
Reverse Transfer Capacitance
–––
130
–––
Coss
Output Capacitance
–––
1130
–––
Coss
Output Capacitance
–––
210
–––
Crss eff.
Effective Output Capacitance
–––
320
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
Ù
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
9.3
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
74
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
37
56
ns
Qrr
Reverse Recovery Charge
–––
52
78
nC
RG = 6.2Ω
Conditions
VGS = 10V
Max.
180
5.6
VGS = 0V, VDS = 0V to 64V g
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 5.6A
e
TJ = 25°C, IF = 5.6A, VDD = 15V
di/dt = 100A/µs
e
TJ = 25°C, IS = 5.6A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
Typ.
–––
–––
VGS = 10V
VGS = 0V
VDS = 25V
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
VDD = 40V,
e
ID = 5.6A
MOSFET symbol
VDS = VGS, ID = 250µA
VDS = 80V, VGS = 0V
VDS = 64V, VGS = 0V, TJ = 125°C
ƒ = 1.0MHz
VDS = 15V, ID = 5.6A
VDS = 40V
VGS = 20V
VGS = -20V
ID = 5.6A


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