Features

1 of 12

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

SZM-3166Z

3.3GHz to 3.6GHz 2W POWER AMPLIFIER

RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier

housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT

amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an

ideal combination of low cost and high reliability. This product is specifically designed for

802.16 customer premises equipment (CPE) terminals in the 3.3GHz to 3.6GHz bands. It can

run from a 3V to 5.2V supply. The external output match and bias adjustability allows load line

optimization for other applications covering 3.5GHz to 3.8GHz. It features an output power

detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator fea-

ture can be utilized by switching the second stage Power up/down control. This product fea-

tures a RoHS compliant and Green package with matte tin finish, designated by the ‘Z’ suffix.

Stage 1

Bias

Stage 2

Bias

Stage 3

Bias

RFIN

RFOUT

Power

Detector

Vbias =5V

Power

Up/Down

Control

Vcc =5V





Three Stages of Gain:35dB



802.11g 54Mb/s Class AB Perfor-

mance



5.2V, 900mA



Active Bias with Adjustable Current



On-Chip Output Power Detector



Low Thermal Resistance



Power Up/Down Control <1

s





Class 1C ESD Rating

Applications



802.16 WiMAX Driver or Output

Stage



Fixed Wireless, WLL



CPE Terminal Applications

DS110620



Package: QFN, 6mmx6mm

SZM-3166Z

3.3GHz to

3.6GHz 2W

Power Ampli-

fier

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Frequency of Operation

3300

3600

MHz

Output Power at 1dB Compression

34.5

dBm

3.5Ghz

Gain

32.0

35.0

38.0

dBm

% EVM

2.5

%

Third Order Suppression

-42

-37

dBc

Noise Figure

5.0

dB

3.5GHz

Worst Case Input Return Loss

11.0

14.0

dB

2.3GHz to 3.5GHz

Worst Case Output Return Loss

6.0

9.0

dB

2.3GHz to 3.5GHz

Supply voltage rang

5.2

V

Output Voltage Range

0.9 to 2.2

V

Quiescent Current

720

800

880

mA

Power Up Control Current

5.0

mA

0.1



Thermal Resistance

12.0

°C/W

junction - lead