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SPA1118Z Datasheet(PDF) 1 Page - RF Micro Devices

Part No. SPA1118Z
Description  850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS
Download  6 Pages
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Maker  RFMD [RF Micro Devices]
Homepage  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SPA1118Z Datasheet(HTML) 1 Page - RF Micro Devices

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Features
1 of 6
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RF MEMS
SPA1118Z
850MHz 1WATT POWER AMPLIFIER WITH
ACTIVE BIAS
RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Tran-
sistor (HBT) amplifier housed in a low-cost surface-mountable plastic
package. These HBT amplifiers are fabricated using molecular beam epi-
taxial growth technology which produces reliable and consistent perfor-
mance from wafer to wafer and lot to lot. This product is specifically
designed for use as a driver amplifier for infrastructure equipment in the
850MHz band. Its high linearity makes it an ideal choice for wireless data
and digital applications.
VCC
VBIAS
RFIN
N/C
RFOUT/
VCC
Active Bias
Input
Match
N/C
N/C
N/C
High Linearity Performance
+21dBm IS-95 Channel
Power at -55dBc ACP
+48dBm OIP3 Typ.
On-Chip Active Bias Control
Patented High Reliability
GaAs HBT Technology
Surface-Mountable Plastic
Package
Applications
Multi-Carrier Applications
AMPS, ISM Applications
DS121024
Package: Exposed Pad SOIC-8
SPA1118Z
850MHz
1Watt Power
Amplifier with
Active Bias
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Frequency of Operation
810
960
MHz
Output Power at 1dB Compression
29.5
dBm
Adjacent Channel Power
-57.0
-54.0
dBc
IS-95 at 880MHz, ±885 KHz, POUT=21dBm
Small Signal Gain
16.2
17.2
18.2
dB
880MHz
Input VSWR
1.5:1
Output Third Order Intercept Point
48.0
dBm
Power out per tone=+14dBm
Noise Figure
7.5
dB
Device Current
275
310
330
mA
Device Voltage
4.75
5.0
5.25
V
Thermal Resistance (junction-lead)
35
°C/W
TL=85°C
Test Conditions: Z0=50 VCC=5V Temp=25°C


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