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SPA1118Z Datasheet(PDF) 3 Page - RF Micro Devices

Part No. SPA1118Z
Description  850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS
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Maker  RFMD [RF Micro Devices]
Homepage  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SPA1118Z Datasheet(HTML) 3 Page - RF Micro Devices

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DS121024
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SPA1118Z
Recommended Land Pattern
Branding Diagram
Pin
Function
Description
1VCC
Supply voltage for the active bias network. Bypassing in the appropriate location as shown on the application schematic
is required for optimum RF performance.
2VBIAS
Bias control pin for the active bias network. Device current is set by the current into this pin. Recommended configura-
tion is shown in the application schematic. Bypassing in the appropriate location as shown on the application schematic
is required for optimum RF performance.
3RF IN
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation.
4, 5
NC
No connection.
6RF OUT/VCC RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present
on this pin a DC-blocking capacitor should be used in most applications. The supply side of the bias network should be
well bypassed. An output matching network is necessary for optimum performance.
7, 8
NC
No connection.
EPAD
GND
Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and
RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern.
Note: DIMENSIONS ARE IN INCHES [MM]
0.020 [0.51]
0.140 [3.56]
0.080 [2.03]
0.050 [1.27]
0.150 [3.81]
0.300 [7.62]
Plated-Thru Holes
(0.015" Dia, 0.030" Pitch)
Machine
Screws


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