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SPA1118Z Datasheet(PDF) 2 Page - RF Micro Devices

Part No. SPA1118Z
Description  850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS
Download  6 Pages
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Maker  RFMD [RF Micro Devices]
Homepage  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SPA1118Z Datasheet(HTML) 2 Page - RF Micro Devices

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DS121024
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SPA1118Z
850MHz to 950MHz Application Circuit Data, ICC=320mA, VCC=5V
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Supply Current (ICC) at VCC typ.
750
mA
Max Device Voltage (VCC) at ICC typ.
6.0
V
Max RF Input Power
24
dBm
Max Junction Temp (TJ)+160
°C
Max Storage Temp
+150
°C
Moisture Sensitivity Level
3
MSL
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
20
22
24
26
28
30
32
0.85
0.87
0.89
0.91
0.93
0.95
25 C
85 C
-4 0 C
10
12
14
16
18
20
22
0.8 5
0.87
0.89
0.91
0.93
0 .95
25C
85C
-4 0 C
-4 0
-3 5
-3 0
-2 5
-2 0
-1 5
-1 0
-5
0
0.85
0.87
0.89
0 .91
0.93
0 .95
S1 1
S1 2
S2 2
-75
-70
-65
-60
-55
-50
-45
17
18
19
20
21
22
23
24
-40C
85C
25C
P1dB vs. Frequency
GHz
IS-95 @ 880 MHz
Adj. Channel Pwr. vs. Channel Output Pwr.
dBm
GHz
Gain vs. Frequency
Input/Output Return Loss,
Isolation vs. Frequency, T=25
°C
GHz
0
50
100
150
200
250
300
350
400
450
01
2
3
45
25C
-40C
85C
Device Current vs. Source Voltage
V
cc (V)


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