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SGC-6289Z Datasheet(PDF) 1 Page - RF Micro Devices

Part No. SGC-6289Z
Description  50MHz to 3500MHz SILICON GERMANIUM ACTIVE BIAS GAIN BLOCK
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Maker  RFMD [RF Micro Devices]
Homepage  http://www.rfmd.com
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SGC-6289Z Datasheet(HTML) 1 Page - RF Micro Devices

   
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Features
1 of 8
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
SGC-6289Z
50MHz to 3500MHz SILICON GERMANIUM
ACTIVE BIAS GAIN BLOCK
RFMD’s SGC-6289Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with an active bias network. The active bias
network provides stable current over temperature and process Beta varia-
tions. Designed to run directly from a 5V supply, the SGC-6289Z does not
require a dropping resistor as compared to traditional Darlington amplifi-
ers. The SGC-6289Z product is designed for high linearity 5V gain block
applications that require small size and minimal external components. It is
internally matched to 50
.
Gain, RL & NF versus Frequency
-40
-30
-20
-10
0
10
20
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
Gain
IRL
ORL
S11
S21
S22
Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25°C
Single Supply Operation: 5V
at ID = 83mA
No Dropping Resistor
Required
Patented Self Bias Circuitry
Gain = 13.5dBm at 1950MHz
P1dB = 19.2dBm at
1950MHz
IP3 = 33.5dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
DS120409
NOT FOR NEW DESIGNS
Package: SOT-89
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Small Signal Gain
14.0
dB
500MHz
12.5
14.0
15.5
dB
850MHz*
12.0
13.5
15.0
dB
1950MHz
Output Power at 1dB Compression
19.0
dBm
500MHz
19.5
dBm
850MHz
17.7
19.2
dBm
1950MHz
Output Third Order Intercept Point
34.5
dBm
500MHz
34.5
dBm
850MHz
31.5
33.5
dBm
1950MHz
Input Return Loss
14.0
18.5
dB
1950MHz
Output Return Loss
20.0
25.5
dB
1950MHz
Noise Figure
3.3
dB
1930MHz
Device Operating Voltage
5
V
Device Operating Current
70
83
96
mA
Thermal Resistance
65
°C/W
junction to lead
Test Conditions: VD = 5.0V, ID = 83mA, TL = 25°C, OIP3 Tone Spacing = 1MHz, *Bias Tee Data, ZS = ZL = 50, POUT per tone = 0dBm, Application Circuit
Data Unless Otherwise Noted


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