Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

SGC2363Z

50MHz to 4000MHz ACTIVE BIAS SILICON

GERMANIUM CASCADABLE GAIN BLOCK

RFMD’s SGC2363Z is a high performance SiGe HBT MMIC amplifier utiliz-

ing a Darlington configuration with a patented active-bias network. The

active bias network provides stable current over temperature and process

Beta variations. Designed to run directly from a 3V supply, the SGC2363Z

does not require a dropping resistor as compared to typical Darlington

amplifiers. The SGC2363Z is designed for high linearity 3V gain block

applications that require small size and minimal external components. It is

internally matched to 50

.

Gain & Return Loss

-30

-20

-10

0

10

20

30

0

0.5

1

1.5

2

2.5

3

3.5

4

Frequency (GHz)

S11

S21

S22



Single, Fixed 3V Supply



No Dropping Resistor

Required



Patented Self-Bias Circuitry







Robust 1000V ESD, Class 1C

HBM

Applications



PA Driver Amplifier



Cellular, PCS, GSM, UMTS,

WCDMA



IF Amplifier



Wireless Data, Satellite

DS111011



Package: SOT-363

SGC2363Z

50MHz to

4000MHz

Active Bias Sili-

con Germa-

nium

Cascadable

Gain Block

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

15.5

17.0

18.5

dB

850MHz

11.6

13.1

14.6

dB

1950MHz

12.3

dB

2400MHz

Output Power at 1dB Compression

10.4

dBm

850MHz

9.1

10.1

dBm

1950MHz

9.6

dBm

2400MHz

Output Third Order Intercept Point

23.0

dBm

850MHz

21.0

23.0

dBm

1950MHz

24.0

dBm

2400MHz

Input Return Loss

12.0

15.0

dB

1950MHz

Output Return Loss

10.5

14.5

dB

1950MHz

Noise Figure

3.7

4.8

dB

1930MHz

Thermal Resistance

255

°C/W

junction - lead

Device Operating Voltage

3.0

V

Device Operating Current

22.0

26.0

30.0

mA