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SGA7489ZSR Datasheet(PDF) 2 Page - RF Micro Devices |
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SGA7489ZSR Datasheet(HTML) 2 Page - RF Micro Devices |
2 / 6 page 2 of 6 DS100915 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SGA7489Z Typical Performance at Key Operating Frequencies Absolute Maximum Ratings Parameter Rating Unit Max Device Current (ID)170 mA Max Device Voltage (VD)7 V Max RF Input Power, ZL=50Ω +16 dBm Max RF Input Power, Load VSWR=10:1* +2 dBm Max Junction Temp (TJ)+150 °C Operating Temp Range (TL) -40 to +85 °C Max Storage Temp +150 °C Moisture Sensitivity Level MSL 2 *Note: Take into account out of band load VSWR presented by devices such as SAW filters to determine maximum RF input power. Reflected harmonic levels in satu- ration are significant. Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD<(TJ-TL)/RTH, j-l Parameter Unit 100 MHz 500 MHz 850 MHz 1950 MHz 2400 MHz Small Signal Gain dB 23.0 22.5 21.5 18.5 17.0 Output Third Order Intercept Point dBm 39.0 36.5 35.5 33.0* 32.2 Output Power at 1dB Compression dBm 22.8 22.6 22.4 20.0 19.0 Input Return Loss dB 13.5 14.5 15.5 15.0 13.5 Output Return Loss dB 19.5 17.0 14.5 11.0 10.5 Reverse Isolation dB 26.025.525.023.022.0 Noise figure dB 2.7 2.7 2.8 3.3 Test Conditions: VS=8V, ID=115mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, Bias Resistance=26Ω, TL=25°C, ZS=ZL=50Ω *Note: An OIP3 of +36dBm at 1950MHz is achieved using the tuned circuit Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. OIP3 vs. Frequency over Temperature VD=5.0V, ID=115 mA (Typ.) at TLEAD=+25°C 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 0 500 1000 1500 2000 2500 Frequency (MHz) -40C +25C +85C +25C Tuned Circuit T LEAD P1dB vs. Frequency over Temperature VD=5.0V, ID=115 mA (Typ.) at TLEAD=+25°C 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 0 500 1000 1500 2000 2500 Frequency (MHz) -40C +25C +85C T LEAD Noise Figure vs. Frequency over Temperature VD=5.0V, ID=115 mA (Typ.) at TLEAD=+25°C 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 500 1000 1500 2000 Frequency (MHz) -40C +25C +85C T LEAD |
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