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SGA7489ZSR Datasheet(PDF) 2 Page - RF Micro Devices

Part # SGA7489ZSR
Description  DC to 3000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SGA7489ZSR Datasheet(HTML) 2 Page - RF Micro Devices

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DS100915
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA7489Z
Typical Performance at Key Operating Frequencies
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)170
mA
Max Device Voltage (VD)7
V
Max RF Input Power, ZL=50Ω
+16
dBm
Max RF Input Power, Load
VSWR=10:1*
+2
dBm
Max Junction Temp (TJ)+150
°C
Operating Temp Range (TL)
-40 to +85
°C
Max Storage Temp
+150
°C
Moisture Sensitivity Level
MSL 2
*Note: Take into account out of band load VSWR presented by devices such as SAW
filters to determine maximum RF input power. Reflected harmonic levels in satu-
ration are significant.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Parameter
Unit
100
MHz
500
MHz
850
MHz
1950
MHz
2400
MHz
Small Signal Gain
dB
23.0
22.5
21.5
18.5
17.0
Output Third Order Intercept Point
dBm
39.0
36.5
35.5
33.0*
32.2
Output Power at 1dB Compression
dBm
22.8
22.6
22.4
20.0
19.0
Input Return Loss
dB
13.5
14.5
15.5
15.0
13.5
Output Return Loss
dB
19.5
17.0
14.5
11.0
10.5
Reverse Isolation
dB
26.025.525.023.022.0
Noise figure
dB
2.7
2.7
2.8
3.3
Test Conditions: VS=8V, ID=115mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, Bias Resistance=26Ω, TL=25°C, ZS=ZL=50Ω
*Note: An OIP3 of +36dBm at 1950MHz is achieved using the tuned circuit
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
OIP3 vs. Frequency over Temperature
VD=5.0V, ID=115 mA (Typ.) at TLEAD=+25°C
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
0
500
1000
1500
2000
2500
Frequency (MHz)
-40C
+25C
+85C
+25C Tuned Circuit
T
LEAD
P1dB vs. Frequency over Temperature
VD=5.0V, ID=115 mA (Typ.) at TLEAD=+25°C
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
0
500
1000
1500
2000
2500
Frequency (MHz)
-40C
+25C
+85C
T
LEAD
Noise Figure vs. Frequency over Temperature
VD=5.0V, ID=115 mA (Typ.) at TLEAD=+25°C
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
500
1000
1500
2000
Frequency (MHz)
-40C
+25C
+85C
T
LEAD


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