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SGA4586Z Datasheet(PDF) 1 Page - RF Micro Devices |
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SGA4586Z Datasheet(HTML) 1 Page - RF Micro Devices |
1 / 6 page Features 1 of 6 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. RF MEMS SGA4586Z DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER The SGA4586Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con- figuration featuring one-micron emitters provides high FT and excellent thermal per- formance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain & Return Loss vs. Freq. @TL=+25°C 0.0 8.0 16.0 24.0 32.0 0.0 1.0 2.0 3.0 4.0 5.0 Frequency (GHz) -40.0 -30.0 -20.0 -10.0 0.0 GAIN IRL ORL High Gain: 17.9dB at 1950MHz Cascadable 50 Ω Operates from Single Supply Low Thermal Resistance Package Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite DS100916 Package: SOT-86 SGA4586ZDC to 4000MHz, Cascadable SiGe HBT MMIC Ampli- fier Parameter Specification Unit Condition Min. Typ. Max. Small Signal Gain 22.0 24.0 26.5 dB 850MHz 17.9 dB 1950MHz 16.3 dB 2400MHz Output Power at 1dB Compression 16.5 dBm 850MHz 13.7 dBm 1950MHz Output Third Intercept Point 28.6 dBm 850MHz 27.7 dBm 1950MHz Bandwidth Determined by Return Loss (>10dB) 4000 MHz >10dB Input Return Loss 19.4 dB 1950MHz Output Return Loss 21.5 dB 1950MHz Noise Figure 1.9 dB 1950MHz Device Operating Voltage 3.6 V Device Operating Current 41 45 49 mA Thermal Resistance (Junction - Lead) 97 °C/W Test Conditions: VS=8V, ID=45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=100Ω, TL=25°C, ZS=ZL=50Ω |
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