Features

1 of 7

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

SGA3286Z

DC to 5000MHz, CASCADABLE SiGe HBT

MMIC AMPLIFIER

The SGA3286Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-

formance. The heterojunction increases breakdown voltage and minimizes leakage

current between junctions. Cancellation of emitter junction non-linearities results in

higher suppression of intermodulation products. At 850MHz and 35mA, the

SGA3286Z typically provides +12.2dBm of 1dB compressed power using a single

positive voltage supply. Only two DC-blocking capacitors, a bias resistor, and an

optional RF choke are required for operation.

0

5

10

15

20

012

345

Frequency (GHz)

-40

-30

-20

-10

0

GAIN

IRL

ORL

Gain & Return Loss vs. Frequency

V



Broadband Operation: DC to

5000MHz



Cascadable 50





Patented SiGe Technology



Operates from Single Supply



Low Thermal Resistance

Package

Applications



PA Driver Amplifier



Cellular, PCS, GSM, UMTS



IF Amplifier



Wireless, Data, Satellite

DS110812



Package: SOT-86

SGA3286ZDC

to 5000MHz,

Cascadable

SiGe HBT

MMIC Ampli-

fier

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

13.0

14.5

16.0

dB

850MHz

13.0

dB

1950MHz

12.2

dB

2400MHz

Output Power at 1dB Compression

12.2

dBm

850MHz

11.3

dBm

1950MHz

Output Third Intercept Point

25.5

dBm

850MHz

24.8

dBm

1950MHz

Bandwidth Determined by Return

Loss (>10dB)

5000

MHz

Input Return Loss

19.2

dB

1950MHz

Output Return Loss

22.7

dB

1950MHz

Noise Figure

3.8

dB

1950MHz

Device Operating Voltage

2.3

2.6

2.9

V

Device Operating Current

31

35

39

mA

Thermal Resistance

(Junction - Lead)

97

°C/W