Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

SGA2163Z

DC to 5000MHz, CASCADABLE SiGe HBT

MMIC AMPLIFIER

The SGA2163Z is a high performance SiGe HBT MMIC Amplifier. A Darling-

excellent thermal performance. The heterojunction increases breakdown

voltage and minimizes leakage current between junctions. Cancellation of

emitter junction non-linearities results in higher suppression of intermodu-

lation products. Only two DC-blocking capacitors, a bias resistor, and an

optional RF choke are required for operation.

Gain & Return Loss vs. Freq. @T

0

3

6

9

12

01

2345

Frequency (GHz)

-40

-30

-20

-10

0

GAIN

IRL

ORL



Broadband Operation: DC to

5000MHz



Cascadable 50





Operates from Single Supply



Low Thermal Resistance

Package

Applications



PA Driver Amplifier



Cellular, PCS, GSM, UMTS



IF Amplifier



Wireless Data, Satellite

DS150112



Package: SOT-363

SGA2163Z

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

9.5

10.5

11.5

dB

850MHz

9.8

dB

1950MHz

9.6

dB

2400MHz

Output Power at 1dB Compression

7.1

dBm

850MHz

6.2

dBm

1950MHz

Output Third Intercept Point

21.0

dBm

850MHz

18.0

dBm

1950MHz

Bandwidth Determined by Return

Loss

5000

MHz

>10dB

Input Return Loss

22.5

dB

1950MHz

Output Return Loss

24.8

dB

1950MHz

Noise Figure

4.4

dB

1950MHz

Device Operating Voltage

1.9

2.2

2.5

V

Device Operating Current

17

20

23

mA

Thermal Resistance

255

°C/W

junction - lead