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NGTB40N120IHLWG Datasheet(PDF) 2 Page - ON Semiconductor |
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NGTB40N120IHLWG Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 8 page  NGTB40N120IHLWG http://onsemi.com 2 THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junction−to−case, for IGBT RqJC 0.48 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.5 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V Collector−emitter saturation voltage VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 150°C VCEsat − − 1.90 2.1 2.35 − V Gate−emitter threshold voltage VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150°C ICES − − − − 0.5 2.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 200 nA DYNAMIC CHARACTERISTIC Input capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Cies − 10400 − pF Output capacitance Coes − 245 − Reverse transfer capacitance Cres − 185 − Gate charge total VCE = 600 V, IC = 40 A, VGE = 15 V Qg 420 nC Gate to emitter charge Qge 95 Gate to collector charge Qgc 178 SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−off delay time TJ = 25°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V td(off) 360 ns Fall time tf 130 Turn−off switching loss Eoff 1.40 mJ Turn−off delay time TJ = 125°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V td(off) 380 ns Fall time tf 185 Turn−off switching loss Eoff 2.6 mJ DIODE CHARACTERISTIC Forward voltage VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A, TJ = 150°C VF 1.6 1.8 1.8 V |
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