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NGTB40N120FLWG Datasheet(PDF) 2 Page - ON Semiconductor |
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NGTB40N120FLWG Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 10 page  NGTB40N120FLWG http://onsemi.com 2 THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junction−to−case, for IGBT RqJC 0.48 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.5 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V Collector−emitter saturation voltage VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 150°C VCEsat 1.50 − 2.0 2.2 2.2 − V Gate−emitter threshold voltage VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150°C ICES − − − − 1.0 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA DYNAMIC CHARACTERISTIC Input capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Cies − 10,000 − pF Output capacitance Coes − 240 − Reverse transfer capacitance Cres − 180 − Gate charge total VCE = 600 V, IC = 40 A, VGE = 15 V Qg − 415 − nC Gate to emitter charge Qge − 80 − Gate to collector charge Qgc − 170 − SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time TJ = 25°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V td(on) − 130 − ns Rise time tr − 41 − Turn−off delay time td(off) − 385 − Fall time tf − 140 − Turn−on switching loss Eon − 2.6 − mJ Turn−off switching loss Eoff − 1.6 − Total switching loss Ets − 4.2 − Turn−on delay time TJ = 125°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V td(on) − 130 − ns Rise time tr − 42 − Turn−off delay time td(off) − 400 − Fall time tf − 230 − Turn−on switching loss Eon − 3.0 − mJ Turn−off switching loss Eoff − 2.8 − Total switching loss Ets − 5.8 − |
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