RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS130822

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

RF MICRO DEVICES

trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.

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RFG1M20180

180W GaN Power Amplifier

1.8GHz to 2.2GHz

The RFG1M20180 is optimized for commercial infrastructure

applications in the 1.8GHz to 2.2GHz frequency band, ideal for

WCDMA and LTE applications. Using an advanced 48V high power

density gallium nitride (GaN) semiconductor process optimized for high

peak to average ratio applications, these high-performance amplifiers

achieve high efficiency and flat gain over a broad frequency range in a

single amplifier design. The RFG1M20180 is an input matched GaN

transistor packaged in an air cavity ceramic package, which provides

excellent thermal stability. Ease of integration is accomplished through

the incorporation of simple, optimized matching networks external to

the package that provide wideband gain, efficiency, and linearizable

performance in a single amplifier.

Functional Block Diagram

Ordering Information

RFG1M20180S2

Sample bag with 2 pieces

RFG1M20180SB

Bag with 5 pieces

RFG1M20180SQ

Bag with 25 pieces

RFG1M20180SR

Short Reel with 50 pieces

RFG1M20180TR13

13” Reel with 300 pieces

RFG1M20180PCBA-410 Evaluation Board

Package: Flanged Ceramic, 2-Pin,

RF400-2

Features

■

Advanced GaN HEMT Technology

■

Typical Peak Modulated Power

>180W

■

Advanced Heat-Sink Technology

■

Single Circuit for 1.8GHz to

2.2GHz

■

48V Operation Typical

Performance





Gain = 15dB



Drain Efficiency = 31%



ACP = -38dBc



Linearizable to -55dBc with

DPD

■

-25°C to 85°C Operating

Temperature

■

Optimized for Video Bandwidth

and Minimized Memory Effects

■

RF Tested for 3GPP Performance

■

RF Tested for Peak Power Using

IS95

■

Large Signal Models Available

Applications

■

Commercial Wireless Infrastructure

■

High Efficiency Doherty

■

High Efficiency Envelope Tracking

RFG1M20180

RF IN

VGQ

Pin 1 (CUT)

RF OUT

VDQ

Pin 2

GND

BASE