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SBB2082S Datasheet(PDF) 2 Page - RF Micro Devices

Part No. SBB2082S
Description  InGaP HBT Amplifier 50MHz to 850MHz
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Maker  RFMD [RF Micro Devices]
Homepage  http://www.rfmd.com
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SBB2082S Datasheet(HTML) 2 Page - RF Micro Devices

   
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RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421
DS131119
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
RF MICRO DEVICES
® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
2 of 5
Absolute Maximum Ratings
Parameter
Rating
Unit
Total Current (ID)
110
mA
Device Voltage (VD)
5.5
V
RF Input Power
+24
dBm
Operating Lead Temperature (TL)
-40 to +85
°C
Storage Temperature Range
-55 to +150
°C
Operating Junction Temp (TJ)
+150
°C
Moisture Sensitivity Level
Hermetic
ESD Rating - Human Body Model (HBM)
Class 2
Operation of this device beyond any one of these limits may cause permanent damage. For
reliable continuous operation, the device voltage and current must not exceed the maximum
operating values specified in the table below.
Bias conditions should also satisfy the following expression: IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Caution! ESD sensitive device.
RFMD Green: RoHS compliant per EU
Directive 2011/65/EU, halogen free per
IEC 61249-2-21, <1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Nominal Operating Parameters
Parameter
Specification
Unit
Condition
Min
Typ
Max
General Performance
Test Conditions: Z0 = 50Ω, VD = 5V, ID = 86mA, T = 25°C, OIP3
POUT/tone = 0dBm, 50Ω test fixture with bias tees
Frequency of Operation
50
850
MHz
Supply Voltage
5.0
V
Supply Current
75
86
98
mA
Small Signal Gain
18.5
20.2
dB
Freq = 100MHz
19.8
dB
Freq = 500MHz
Output Power at 1dB Compression
18.0
19.5
dBm
Freq = 70MHz
Output Third Order Intercept Point
38.5
40.5
dBm
F1 = 70MHz, F2 = 71MHz
Input Return Loss
9.5
25
dB
Freq = 100MHz
25.0
dB
Freq = 500MHz
Output Return Loss
9.5
20
dB
Freq = 100MHz
15.0
dB
Freq = 500MHz
Reverse Isolation
19
22
dB
Freq = 100MHz
22.0
dB
Freq = 500MHz
Noise Figure
3.1
dB
Freq = 500MHz
Thermal Resistance
45
°C/W
Junction to case


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