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SBA-5089 Datasheet(PDF) 1 Page - RF Micro Devices

Part No. SBA-5089
Description  DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER
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Maker  RFMD [RF Micro Devices]
Homepage  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SBA-5089 Datasheet(HTML) 1 Page - RF Micro Devices

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Features
1 of 6
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
SBA5089Z
DCto5GHz, CASCADABLE InGaP/GaAs HBT
MMIC AMPLIFIER
RFMD’s SBA5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran-
sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech-
nology provides broadband performance up to 5GHz with excellent thermal
performance. The heterojunction increases breakdown voltage and minimizes leak-
age current between junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only a single positive
supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke
are required for operation.
Gain & Return Loss
-40
-30
-20
-10
0
10
20
30
012345
6
Frequency (GHz)
S22
S21
S11
IP3=34.0dBm at 1950MHz
POUT=13.0dBm at -45dBc
ACP IS-95 1950MHz
Robust 1000V ESD, Class 1C
Operates From Single Supply
Patented Thermal Design
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Terminals
DS111204
Package: SOT-89
SBA5089Z
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Small Signal Gain
18.5
20.0
21.5
dB
850MHz
16.5
18.0
19.5
dB
1950MHz
Output Power at 1dB Compression
19.7
dBm
850MHz
18.0
19.5
dBm
1950MHz
Output Third Order Intercept Point
36.0
dBm
850MHz
32.0
34.0
dBm
1950MHz
Output Power
13.0
dBm
1950MHz, -45dBc ACP IS-95 9 Forward Channels
Bandwidth
4400
MHz
Return Loss >10dB
Input Return Loss
14.0
20.0
dB
1950MHz
Output Return Loss
9.0
11.0
dB
1950MHz
Noise Figure
4.5
5.5
dB
1950MHz
Device Operating Voltage
4.7
4.9
5.3
V
Device Operating Current
72
80
88
mA
Thermal Resistance (junction to lead)
70
°C/W
Test Conditions: VS=8V, ID=80mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=39, TL=25°C, ZS=ZL=50


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