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SBA-5089 Datasheet(PDF) 2 Page - RF Micro Devices

Part # SBA-5089
Description  DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SBA-5089 Datasheet(HTML) 2 Page - RF Micro Devices

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DS111204
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SBA5089Z
Typical Performance at Key Operating Frequencies
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ID)130
mA
Device Voltage (VD)6
V
RF Input Power
+17
dBm
Junction Temp (TJ)+150
°C
Operating Temp Range (TL)
-40 to +85
°C
Storage Temp
+150
°C
Operating Dissipated Power
0.65
W
Moisture Sensitivity Level
MSL 2
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Parameter
Unit
100MHz
500MHz
850MHz
1950MHz
2400MHz
3500MHz
Small Signal Gain
dB
20.5
20.2
19.9
18.0
17.1
15.3
Output Third Order Intercept
Point
dBm
36.3
35.8
36.0
34.0
32.7
30.9
Output Power at 1dB
Compression
dBm
19.8
19.8
19.7
19.5
18.8
17.1
Input Return Loss
dB
29
27
25
20
17
11.8
Output Return Loss
dB
27
21
17
11
11
11
Reverse Isolation
dB
22
222323
23
23
Noise Figure
dB
4.1
4.3
4.2
4.5
-
-
Test Conditions: VS=8V, ID=80mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=39, TL=25°C, ZS=ZL=50
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Test Conditions:
Noise Figure vs. Frequency
2
3
4
5
6
0
0.5
1
1.5
2
Frequency (GHz)
+25c
-40c
+85c
OIP3vs.Frequency
26
28
30
32
34
36
38
0
0.5
1
1.5
2
2.5
3
3.5
Frequency(GHz)
+25c
-40c
+85c
P1dB vs. Frequency
15
16
17
18
19
20
21
00.5
11.5
22.533.5
Frequency (GHz)
+25c
-40c
+85c


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